SPP47N10 Infineon Technologies, SPP47N10 Datasheet - Page 4

• Manufacturer Part Number: SPP47N10
• Description: MOSFET N-CH 100V 47A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP47N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012415

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
190
160
140
120
100
W
A
80
60
40
20
0
3
2
1
0
10
0
SPP47N10
SPP47N10
DS
-1
C
20
)
)
40
10
0
60
80 100 120 140 160
C
= 25 °C
10
1
DC
t p = 7.1µs
10
10 µs
100 µs
1 ms
10 ms
2
T
V
°C
V
C
Preliminary data
DS
190
10
Page 4
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
55
45
40
35
30
25
20
15
10
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
C
SPP47N10
SPP47N10
-7
)
20
p
10
)
single pulse
GS
-6
40

10
p
60
10 V
/T
-5
SPP47N10,SPB47N10
80 100 120 140 160
10
-4
10
-3
10
2001-08-24
-2
SPI47N10
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0