BAP50-04W,115 NXP Semiconductors, BAP50-04W,115 Datasheet

DIODE PIN GP 50V 50MA SOT-323

BAP50-04W,115

Manufacturer Part Number
BAP50-04W,115
Description
DIODE PIN GP 50V 50MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP50-04W,115

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.5pF @ 5V, 1MHz
Resistance @ If, F
5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
240mW
Configuration
Dual Series
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Carrier Life
1.05 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.5 pF at 5 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
240 mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
1.05us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1918-2
934056532115
BAP50-04W T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D102
BAP50-04W
General purpose PIN diode
Product specification
2001 Jan 29

Related parts for BAP50-04W,115

BAP50-04W,115 Summary of contents

Page 1

... DATA SHEET ok, halfpage BAP50-04W General purpose PIN diode Product specification DISCRETE SEMICONDUCTORS M3D102 2001 Jan 29 ...

Page 2

... T junction temperature j 2001 Jan 29 PINNING PIN handbook, halfpage 1 Top view Marking code: 6W-. Fig.1 Simplified outline (SOT323) and symbol. CONDITIONS = 90  Product specification BAP50-04W DESCRIPTION anode cathode common connection MAM391 MIN. MAX. UNIT    240 mW 65 C +150  ...

Page 3

... MHz; note mA 100 MHz; note mA 100 MHz; note 1 F when switched from 100 ; measured mA 100 MHz F PARAMETER 3 Product specification BAP50-04W MIN. TYP. MAX.  0.95 1.1   50   100   0.45  0.35 0.6  0.30 0.5  ...

Page 4

... Diode capacitance as a function of reverse voltage; typical values (dB) −5 −10 −15 −20 −25 0.5 1 1.5 2 Diode zero biased and inserted in series with a 50  stripline circuit C. T amb  2 Fig.5 Isolation ( the diode in off-state function of frequency; typical values. Product specification BAP50-04W MLD523 (V) MLD525 2 (GHz) ...

Page 5

... OUTLINE VERSION IEC SOT323 2001 Jan scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC- detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION Product specification BAP50-04W SOT323 ISSUE DATE 04-11-04 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP50-04W DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP50-04W ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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