PD55015TR-E STMicroelectronics, PD55015TR-E Datasheet

TRANS RF N-CH FET POWERSO-10RF

PD55015TR-E

Manufacturer Part Number
PD55015TR-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55015TR-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
14dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
40V
Output Power (max)
15W(Min)
Power Gain (typ)@vds
14dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5S
Input Capacitance (typ)@vds
89@12.5VpF
Output Capacitance (typ)@vds
60@12.5VpF
Reverse Capacitance (typ)
6.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
73000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-10097-2
PD55015TR-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55015TR-E
Manufacturer:
ST
Quantity:
2 000
Part Number:
PD55015TR-E
Manufacturer:
ST
0
Part Number:
PD55015TR-E
Manufacturer:
ST
Quantity:
20 000
Features
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for car mobile radio. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performance and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Table 1.
May 2010
Excellent thermal stability
Common source configuration
P
New RF plastic package
OUT
=15 W with 14dB gain @ 500 MHz/12.5 V
PD55015STR-E
PD55015TR-E
PD55015S-E
Order code
PD55015-E
Device summary
N-channel enhancement-mode, lateral MOSFETs
RF POWER transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Doc ID 12596 Rev 2
Package
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD55015S-E
Tape and reel
Tape and reel
PD55015-E
Packing
Tube
Tube
Source
Drain
www.st.com
1/25
25

Related parts for PD55015TR-E

PD55015TR-E Summary of contents

Page 1

... RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code PD55015-E PD55015S-E PD55015TR-E PD55015STR-E May 2010 RF POWER transistor, LdmoST plastic family Figure 1. Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

PD55015-E, PD55015S-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source ...

Page 4

Electrical characteristics 2 Electrical characteristics +25 C CASE 2.1 Static Table 4. Static Symbol DSS GSS GS( ...

Page 5

PD55015-E, PD55015S-E 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 480 1. 0.56 500 1. 0.77 520 1. 1.17 PD55015 Z (Ω) Z (Ω) Freq. (MHz 1.27 - ...

Page 6

Typical performance 4 Typical performance Figure 3. Capacitance vs. drain voltage C (pF) 1000 100 VDS (V) Figure 5. Gate-source voltage vs. case temperature 1.04 1.02 1 0.98 V ...

Page 7

PD55015-E, PD55015S-E 4.1 PD55015-E Figure 6. Output power vs. input power 18 16 480 MHz 14 12 500 MHz 0.2 0.4 Pin, INPUT POWER (W) Figure 8. Drain efficiency vs. output power 60 ...

Page 8

Typical performance Figure 10. Output power vs. bias current 22 20 480 MHz 500 MHz 200 400 600 Idq, BIAS CURRENT (mA) Figure 12. Output power vs. drain voltage 25 20 480 MHz 15 10 ...

Page 9

PD55015-E, PD55015S-E 4.2 PD55015S-E Figure 15. Output power vs. input power 18 16 480 MHz 14 12 500 MHz 0.1 0.2 0.3 0.4 Pin, INPUT POWER (W) Figure 17. Drain efficiency vs. output ...

Page 10

Typical performance Figure 21. Output power vs. drain voltage 25 20 480 MHz 15 500 MHz VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23. Output power vs. gate bias voltage Figure 24. Power ...

Page 11

PD55015-E, PD55015S-E 5 Test circuit Figure 27. Test circuit schematic Table 8. Test circuit component part list Component B1,B2 C1,C12 C2,C3,C4,C11,C12,C13 C6, C18 C9, C15 C8, C16 C7, C17 C5, C10 L1 N1 ...

Page 12

Circuit layout 6 Circuit layout Figure 28. Test fixture component layout Figure 29. Test circuit photomaster 12/25 Doc ID 12596 Rev 2 PD55015-E, PD55015S-E ...

Page 13

PD55015-E, PD55015S-E 7 Common source s-parameter Table 9. S-parameter for PD55015-E (V Freq < Φ (MHz) 50 0.783 -164 100 0.831 -170 150 0.857 -173 200 0.873 -174 250 0.886 -175 300 0.899 -176 350 ...

Page 14

Common source s-parameter Table 10. S-parameter for PD55015-E (V Freq < Φ (MHz) 50 0.837 -171 100 0.882 -174 150 0.904 -177 200 0.913 -178 250 0.915 -179 300 0.919 -173 350 0.924 179 400 ...

Page 15

PD55015-E, PD55015S-E Table 11. S-parameter for PD55015-E (V Freq < Φ (MHz) 50 0.845 -172 100 0.891 -175 150 0.913 -177 200 0.923 -179 250 0.924 -180 300 0.927 180 350 0.930 179 400 0.933 ...

Page 16

Common source s-parameter Table 12. S-parameter for PD55015S-E (V Freq < Φ (MHz) 50 0.769 -161 100 0.820 -167 150 0.847 -170 200 0.869 -172 250 0.884 -172 300 0.900 -173 350 0.914 -174 400 ...

Page 17

PD55015-E, PD55015S-E Table 13. S-parameter PD55015S-E (V Freq < Φ (MHz) 50 0.826 -170 100 0.872 -173 150 0.893 -175 200 0.905 -176 250 0.907 -177 300 0.914 -178 350 0.920 -178 400 0.925 -178 ...

Page 18

Common source s-parameter Table 14. S-parameter for PD55015S-E (V Freq < Φ (MHz) 50 0.838 -171 100 0.882 -174 150 0.903 -176 200 0.914 -177 250 0.915 -178 300 0.920 -178 350 0.925 -179 400 ...

Page 19

PD55015-E, PD55015S-E 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...

Page 20

Package mechanical data Table 15. PowerSO-10RF Formed lead (Gull Wing) Mechanical data Dim Note: Resin protrusions not included (max ...

Page 21

PD55015-E, PD55015S-E Table 16. PowerSO-10RF straight lead mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per side) ...

Page 22

Package mechanical data Figure 32. Tube information 22/25 Doc ID 12596 Rev 2 PD55015-E, PD55015S-E ...

Page 23

PD55015-E, PD55015S-E Figure 33. Reel information Doc ID 12596 Rev 2 Package mechanical data 23/25 ...

Page 24

Revision history 9 Revision history Table 17. Document revision history Date 03-Aug-2006 26-May-2010 24/25 Revision 1 Initial release. 2 Added: Table 6: Moisture sensitivity Doc ID 12596 Rev 2 PD55015-E, PD55015S-E Changes level. ...

Page 25

... PD55015-E, PD55015S-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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