MRF6V2300NBR5 Freescale Semiconductor, MRF6V2300NBR5 Datasheet

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MRF6V2300NBR5

Manufacturer Part Number
MRF6V2300NBR5
Description
MOSFET RF N-CH 50V TO-272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V2300NBR5

Transistor Type
N-Channel
Frequency
220MHz
Gain
25.5dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
900mA
Voltage - Test
50V
Power - Output
300W
Package / Case
TO-272-4
Mounting Style
SMD/SMT
Drain Source Voltage Vds
110V
Rf Transistor Case
TO-272
Transistor Polarity
N Channel
Filter Terminals
SMD
Operating Frequency Max
220MHz
Output Power Pout
300W
Gate-source Voltage
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MRF6V2300NBR5TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V2300NBR5
Manufacturer:
FREESCALE
Quantity:
101
Part Number:
MRF6V2300NBR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Designed primarily for CW large--signal output and driver applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
Case Temperature 83°C, 300 W CW
out
Power Gain — 25.5 dB
Drain Efficiency — 68%
MTTF calculators by product.
Select Documentation/Application Notes -- AN1955.
= 300 Watts, f = 220 MHz
Characteristic
Rating
DD
(1,2)
Test Methodology
= 50 Volts, I
DD
Operation
DQ
Symbol
Symbol
= 900 mA,
V
R
V
T
T
T
DSS
stg
θJC
GS
C
J
-- 65 to +150
--0.5, +110
Value
--0.5, +10
Value
0.24
150
225
(2,3)
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V2300N
in
in
MRF6V2300NBR1
/V
/V
MRF6V2300NR1 MRF6V2300NBR1
MRF6V2300NR1
Figure 1. Pin Connections
GS
GS
PARTS ARE SINGLE- -ENDED
10- -600 MHz, 300 W, 50 V
the source terminal for the transistor.
LATERAL N- -CHANNEL
RF POWER MOSFETs
SINGLE- -ENDED
IV (Minimum)
2 (Minimum)
A (Minimum)
BROADBAND
Class
CASE 1486- -03, STYLE 1
(Top View)
CASE 1484- -04, STYLE 1
MRF6V2300NBR1
MRF6V2300NR1
TO- -270 WB- -4
TO- -272 WB- -4
PLASTIC
PLASTIC
Rev. 5, 4/2010
RF
RF
out
out
/V
/V
DS
DS
1

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MRF6V2300NBR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor = 900 mA, ...

Page 2

... 220 MHz, CW out 24 25 — % — --16 -- Vdc 900 mA 300 out — 31.4 — dB — 21.7 — — 61.5 — % — 59.1 — — --17.4 — dB — --24.4 — RF Device Data Freescale Semiconductor ...

Page 3

... C20 470 μ Electrolytic Capacitor C21 24 pF Chip Capacitor C22 39 pF Chip Capacitor L1 4 Turn #18 AWG, 0.18″ Inductor R1 270 Ω, 1/4 W Chip Resistor R2, R3 4.75 Ω, 1/4 W Chip Resistors RF Device Data Freescale Semiconductor C11 DUT Z8 0.085″ x 0.170″ Microstrip Z9 2.275″ ...

Page 4

... C10 C11 C12 C13 * Stacked Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout — 220 MHz MRF6V2300NR1 MRF6V2300NBR1 4 C4 C19 C5 C18 C6 C17 R1 B2 C15* C8 C16 C20 L2 C14 L1 C23 C22 C21 MRF6V2300N/NB Rev Device Data Freescale Semiconductor ...

Page 5

... Two--Tone Measurements, 100 kHz Tone Spacing -- 450 mA DQ --30 --35 650 mA --40 1125 mA --45 --50 -- OUTPUT POWER (WATTS) PEP out Figure 8. Third Order Intermodulation Distortion versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 1125 mA 26 900 mA 2. 2.63 V 650 mA 24 ...

Page 6

... CW Output Power G ps η D IMD3 300 W (Peak) DD out I = 1100 mA, Tone--Spacing = 100 kHz DQ 170 180 190 200 210 220 f, FREQUENCY (MHz --30_C C 25_C 85_C Vdc 900 220 MHz INPUT POWER (dBm --30_C 600 --28 -- --30 25 --31 -- --33 230 240 RF Device Data Freescale Semiconductor 35 ...

Page 7

... Figure 14. MTTF versus Junction Temperature RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device is operated Vdc 300 W CW, and η DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & ...

Page 8

... MHz Ω 220 1.23 + j3.69 2.43 + j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Network Test Z Z source load Z load Ω Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... W Carbon Resistor R4*, ** 510 Ω, 1/2 W Carbon Resistor T1 RF600 Transformer 16:1 Impedance Ratio T2 RF1000 Transformer 9:1 Impedance Ratio * Leaded components mounted over traces. ** Resistor is mounted at center of inductor coil. RF Device Data Freescale Semiconductor L3*, R4 C18 C17 C16 C22 B2 C14 C21 ...

Page 10

... C18 C16 C13 C14 C15 C17 C11 C12 450 MHz 272--WB Rev. 2 Part Number Manufacturer Fair--Rite ATC ATC Illinois Capacitor Kemet Kemet ATC ATC AVX Kemet Kemet ATC ATC ATC Multicomp ATC Coilcraft Coilcraft Coilcraft DS Electronics RF Device Data Freescale Semiconductor ...

Page 11

... MHz Z source f = 450 MHz MHz Z load Figure 18. Series Equivalent Source and Load Impedance — 27, 450 MHz RF Device Data Freescale Semiconductor Ω MHz Z source Z load Vdc 900 mA 300 out f Z source MHz Ω 27 10.5 + j19.0 3.50 + j0.19 450 0.50 + j1.37 1.25 + j0.99 ...

Page 12

... MRF6V2300NR1 MRF6V2300NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 13 ...

Page 14

... MRF6V2300NR1 MRF6V2300NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 15 ...

Page 16

... MRF6V2300NR1 MRF6V2300NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 17 ...

Page 18

... MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF6V2300NR1 MRF6V2300NBR1 18 REVISION HISTORY Description test condition to indicate AC stimulus on the V iss connection versus the V connection Device Data Freescale Semiconductor ...

Page 19

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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