MRF6V2150NR1 Freescale Semiconductor, MRF6V2150NR1 Datasheet

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MRF6V2150NR1

Manufacturer Part Number
MRF6V2150NR1
Description
MOSFET RF N-CH TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V2150NR1

Transistor Type
N-Channel
Frequency
220MHz
Gain
25dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
450mA
Voltage - Test
50V
Power - Output
150W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V2150NR1
Manufacturer:
TRACO
Quantity:
300
Part Number:
MRF6V2150NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field- -Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Designed primarily for CW large--signal output and driver applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
Case Temperature 80°C, 150 W CW
out
Power Gain — 25 dB
Drain Efficiency — 68.3%
MTTF calculators by product.
Select Documentation/Application Notes -- AN1955.
= 150 Watts
Characteristic
Rating
Test Methodology
(1,2)
DD
Operation
DD
= 50 Volts, I
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
DQ
-- 65 to +150
-- 0.5, +110
Value
-- 0.5, + 12
= 450 mA,
Value
0.24
150
225
(2,3)
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V2150N
in
in
MRF6V2150NBR1
/V
/V
MRF6V2150NR1 MRF6V2150NBR1
MRF6V2150NR1
Figure 1. Pin Connections
GS
GS
PARTS ARE SINGLE- -ENDED
10- -450 MHz, 150 W, 50 V
the source terminal for the transistor.
LATERAL N- -CHANNEL
RF POWER MOSFETs
IV (Minimum)
A (Minimum)
2 (Minimum)
SINGLE- -ENDED
BROADBAND
Class
CASE 1486- -03, STYLE 1
(Top View)
CASE 1484- -04, STYLE 1
MRF6V2150NBR1
MRF6V2150NR1
TO- -270 WB- -4
TO- -272 WB- -4
PLASTIC
PLASTIC
Rev. 4, 4/2010
RF
RF
out
out
/V
/V
DS
DS
1

Related parts for MRF6V2150NR1

MRF6V2150NR1 Summary of contents

Page 1

... CASE 1486- -03, STYLE 1 TO- -270 WB- -4 PLASTIC MRF6V2150NR1 CASE 1484- -04, STYLE 1 TO- -272 WB- -4 PLASTIC MRF6V2150NBR1 PARTS ARE SINGLE- -ENDED out out DS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Class 2 (Minimum) A (Minimum) IV (Minimum) MRF6V2150NR1 MRF6V2150NBR1 1 ...

Page 2

... Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2150NR1 MRF6V2150NBR1 2 Rating 3 = 25° ...

Page 3

... Z5 0.434″ x 0.220″ Microstrip Z6, Z7 0.298″ x 0.630″ Microstrip Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic — 220 MHz Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount C1 47 μ ...

Page 4

... C10 C11 C12 R2 C13 * Stacked Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 220 MHz MRF6V2150NR1 MRF6V2150NBR1 4 C4 C19 C5 C18 C6 C17 R1 B2 C15* C8 C16 C20 L2 C14 L1 C23 C21 C22 MRF6V2150N/NB Rev Device Data Freescale Semiconductor ...

Page 5

... Figure 9. CW Output Power versus Input Power = 25°C 10 100 V , DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 5. DC Safe Operating Area = 675 Vdc 220 MHz 10 100 P , OUTPUT POWER (WATTS) CW out P3dB = 52.61 dBm (182. Vdc 450 220 MHz INPUT POWER (dBm) in MRF6V2150NR1 MRF6V2150NBR1 200 200 Ideal Actual 32 5 ...

Page 6

... Figure 10. Power Gain versus Output Power --30_C C 25 25_C 24 85_C 23 η OUTPUT POWER (WATTS) CW out Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF6V2150NR1 MRF6V2150NBR1 6 TYPICAL CHARACTERISTICS 450 220 MHz 35 150 200 10 Figure 11. Power Output versus Power Input 25_C 70 85_C ...

Page 7

... Z source MHz Ω 220 2.45 + j6.95 3.90 + j5. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Under Matching Network Test Z Z source load Z load Ω Output Matching Network MRF6V2150NR1 MRF6V2150NBR1 7 ...

Page 8

... C14 C15 B1 C6 L3*, R3 Figure 15. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 27 MHz Table 7. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz Part B1 Ω, 100 MHz Long Ferrite Beads B2 47 Ω, 100 MHz Short Ferrite Bead C1, C4, C5, C16 100 pF Chip Capacitors C2 ...

Page 9

... C10 C11 Figure 16. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 450 MHz Table 8. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part B1, B2 Ω, 100 MHz Short Ferrite Beads C1 6.8 pF Chip Capacitor Chip Capacitor C3, C5, C17, C18 240 pF Chip Capacitors C4 ...

Page 10

... MHz Z source MHz Z load f = 450 MHz Z load Figure 17. Series Equivalent Source and Load Impedance — 27, 450 MHz MRF6V2150NR1 MRF6V2150NBR1 MHz Z source Vdc 450 mA 150 out source MHz Ω 27 6.57 + j41.4 7.16 + j3.02 450 0.80 + j3.20 2.20 + j2. Test circuit impedance as measured from source gate to ground ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2150NR1 MRF6V2150NBR1 11 ...

Page 12

... MRF6V2150NR1 MRF6V2150NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 13 ...

Page 14

... MRF6V2150NR1 MRF6V2150NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 15 ...

Page 16

... MRF6V2150NR1 MRF6V2150NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description test condition to indicate AC stimulus on the V iss connection versus the V connection MRF6V2150NR1 MRF6V2150NBR1 17 ...

Page 18

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V2150NR1 MRF6V2150NBR1 Document Number: MRF6V2150N Rev. 4, 4/2010 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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