MRF6S18100NR1 Freescale Semiconductor, MRF6S18100NR1 Datasheet
MRF6S18100NR1
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MRF6S18100NR1 Summary of contents
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... GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 MRF6S18100NR1 CASE 1484 - 04, STYLE 272 MRF6S18100NBR1 Symbol Value Unit V - 0.5, +68 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.51 0.62 MRF6S18100NR1 MRF6S18100NBR1 1 ...
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... Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V Power Gain Drain Efficiency Input Return Loss Compression Point out 1. Part internally matched both on input and output. MRF6S18100NR1 MRF6S18100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Z6 1.190″ x 0.080″ Microstrip Z7, Z8 0.115″ x 1.000″ Microstrip Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930 - 1990 MHz Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz Part C1 100 nF Chip Capacitor C2, C3, C6, C10, C11 6.8 pF Chip Capacitors C4, C5, C12, C13 4.7 μ ...
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... Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1930 - 1990 MHz MRF6S18100NR1 MRF6S18100NBR1 C12 C13 C11 MRF6S18100N Rev. 0 C14 C10 C9 RF Device Data Freescale Semiconductor ...
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... DQ 1920 1940 1960 1980 2000 f, FREQUENCY (MHz Watts out Vdc 100 − −20 − −40 2020 −10 40 −20 − −40 2020 900 1960 MHz 100 120 P , OUTPUT POWER (WATTS) CW out Figure 6. Power Gain versus Output Power MRF6S18100NR1 MRF6S18100NBR1 140 160 5 ...
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... Output Power − Vdc 700 1960 MHz, EDGE Modulation −45 −50 −55 − −30_C C −65 −70 − OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 400 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1 6 1930 - 1990 MHz — −30_C 25_C I DQ η 85_C 100 ...
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... Software & Tools/Development Tools/Calculators to access MTTF calculators by product. GSM TEST SIGNAL Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz Center 1.96 GHz 200 kHz Figure 14. EDGE Spectrum 230 250 400 kHz 600 kHz Span 2 MHz MRF6S18100NR1 MRF6S18100NBR1 7 ...
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... Figure 15. Series Equivalent Source and Load Impedance — 1930 - 1990 MHz MRF6S18100NR1 MRF6S18100NBR1 Ω 2020 MHz f = 2020 MHz Z load f = 1900 MHz Vdc 900 mA 100 out source load MHz W W 1900 2.80 - j4.53 1.75 - j3.52 1930 2.71 - j4.27 1.67 - j3.25 1960 2.63 - j4.03 1 ...
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... Z6 1.190″ x 0.080″ Microstrip Z7, Z8 0.115″ x 1.000″ Microstrip Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1805 - 1880 MHz Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1805 - 1880 MHz Part C1 100 nF Chip Capacitor C2, C3, C6, C13, C14 8.2 pF Chip Capacitors C4, C5, C15, C16 4.7 μ ...
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... Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1805 - 1880 MHz MRF6S18100NR1 MRF6S18100NBR1 10 R3 C10 C9 C17 C13 C11 C12 C15 C16 C14 MRF6S18100N Rev Device Data Freescale Semiconductor ...
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... 1840 MHz EDGE Modulation Avg. out Avg Avg. 0 1880 1900 1 P Figure 21. EVM and Drain Efficiency versus −10 30 −20 − −40 1880 − −20 − −40 1880 η 25_C C EVM 10 100 , OUTPUT POWER (WATTS) AVG. out Output Power MRF6S18100NR1 MRF6S18100NBR1 ...
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... T = 25_C C −60 −65 −70 − OUTPUT POWER (WATTS) out Figure 23. Spectral Regrowth at 400 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1 Avg. out SR @ 400 kHz 42 W Avg Avg Avg 600 kHz 25 W Avg. 1800 1820 1840 1860 1880 f, FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency − ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Output Matching Network MRF6S18100NR1 MRF6S18100NBR1 13 ...
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... MRF6S18100NR1 MRF6S18100NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 15 ...
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... MRF6S18100NR1 MRF6S18100NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 17 ...
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... MRF6S18100NR1 MRF6S18100NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 19 ...
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... Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue 19. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History MRF6S18100NR1 MRF6S18100NBR1 20 PRODUCT DOCUMENTATION REVISION HISTORY Description ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6S18100NR1 MRF6S18100NBR1 21 ...