MRF7S19100NBR1 Freescale Semiconductor, MRF7S19100NBR1 Datasheet

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MRF7S19100NBR1

Manufacturer Part Number
MRF7S19100NBR1
Description
MOSFET RF N-CH 28V 29W TO272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S19100NBR1

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
17.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1A
Voltage - Test
28V
Power - Output
29W
Package / Case
TO-272-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
29W
Power Gain (typ)@vds
17.5dB
Frequency (min)
1.93GHz
Frequency (max)
1.99GHz
Package Type
TO-272 WB EP
Pin Count
5
Output Capacitance (typ)@vds
553.5@28VpF
Reverse Capacitance (typ)
1.54@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
30%
Mounting
Surface Mount
Mode Of Operation
1-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1000 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Peak Tuned Output Power
Case Temperature 82°C, 100 W CW
Case Temperature 79°C, 29 W CW
out
Power Gain — 17.5 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 100 W CW
out
= 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S19100N
CASE 1484 - 04, STYLE 1
CASE 1486 - 03, STYLE 1
MRF7S19100NR1 MRF7S19100NBR1
1930 - 1990 MHz, 29 W AVG., 28 V
MRF7S19100NBR1
MRF7S19100NBR1
MRF7S19100NR1
MRF7S19100NR1
TO - 272 WB - 4
TO - 270 WB - 4
LATERAL N - CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
SINGLE W - CDMA
- 65 to +200
Value
- 0.5, +65
- 0.5, +10
32, +0
Value
0.57
0.68
150
225
(2,3)
Rev. 3, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S19100NBR1 Summary of contents

Page 1

... MHz AVG CASE 1486 - 03, STYLE 1 MRF7S19100NR1 CASE 1484 - 04, STYLE 1 MRF7S19100NBR1 Symbol V DSS stg Symbol R θJC MRF7S19100NR1 MRF7S19100NBR1 Rev. 3, 12/2008 SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs TO - 270 PLASTIC TO - 272 PLASTIC Value Unit - 0.5, +65 Vdc - 0.5, +10 Vdc 32, +0 Vdc - 65 to +200 °C 150 °C 225 ° ...

Page 2

... Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 11/ Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S19100NR1 MRF7S19100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Delay = 100 W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 1000 mA, 1930 - 1990 MHz Bandwidth — 30 — — 1 — — 2.15 — — 28.8 — — 0.019 — — 0.015 — MRF7S19100NR1 MRF7S19100NBR1 Unit MHz dB ns ° dB/°C dBm/°C 3 ...

Page 4

... V Tantalum Capacitor C2, C5, C6, C10, C11 10 μ Chip Capacitors C3, C7 5.1 pF Chip Capacitors C4, C9 8.2 pF Chip Capacitors Chip Capacitor R1 1 KΩ, 1/4 W Chip Resistor R2 10 KΩ, 1/4 W Chip Resistor R3 10 Ω, 1/4 W Chip Resistor MRF7S19100NR1 MRF7S19100NBR1 Z12 Z13 DUT Z8 0.319″ x 0.880″ Microstrip Z9 0.390″ ...

Page 5

... MRF7S19100N/NB Rev. 1 Figure 2. MRF7S19100NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 C11 C9 MRF7S19100NR1 MRF7S19100NBR1 5 ...

Page 6

... Vdc 1955 MHz 1965 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S19100NR1 MRF7S19100NBR1 6 TYPICAL CHARACTERISTICS G ps η Vdc (Avg.), I = 1000 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 7 ...

Page 7

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power = 28 Vdc 100 W (PEP 1000 mA DD out DQ IM3−U IM3−L IM5−U IM5−L 10 TWO−TONE SPACING (MHz) versus Tone Spacing 50 Ideal Actual 25_C 50 85_C 100 300 MRF7S19100NR1 MRF7S19100NBR1 100 7 ...

Page 8

... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S19100NR1 MRF7S19100NBR1 8 TYPICAL CHARACTERISTICS 1000 1960 MHz ...

Page 9

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load f = 1880 MHz Output Matching Network MRF7S19100NR1 MRF7S19100NBR1 9 ...

Page 10

... P , INPUT POWER (dBm) in NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Z source Ω P3dB 4.39 - j5.66 Figure 16. Pulsed CW Output Power versus Input Power MRF7S19100NR1 MRF7S19100NBR1 Ideal 58 P3dB = 52.20 dBm (165. P1dB = 50.94 dBm 54 Actual (124. 1000 mA ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S19100NR1 MRF7S19100NBR1 11 ...

Page 12

... MRF7S19100NR1 MRF7S19100NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 13 ...

Page 14

... MRF7S19100NR1 MRF7S19100NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF7S19100NR1 MRF7S19100NBR1 15 ...

Page 16

... MRF7S19100NR1 MRF7S19100NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for Characteristics table GS(Q) 2 and listed MRF7S19100NR1 MRF7S19100NBR1 17 ...

Page 18

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S19100NR1 MRF7S19100NBR1 Document Number: MRF7S19100N Rev. 3, 12/2008 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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