MRF21030LR3 Freescale Semiconductor, MRF21030LR3 Datasheet

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MRF21030LR3

Manufacturer Part Number
MRF21030LR3
Description
IC MOSFET RF N-CHAN NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF21030LR3

Transistor Type
N-Channel
Frequency
2.14GHz
Gain
13dB
Voltage - Rated
65V
Current Rating
1µA
Current - Test
250mA
Voltage - Test
28V
Power - Output
30W
Package / Case
NI-400
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
Output Power
Derate above 25°C
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF21030
MRF21030LSR3
MRF21030LR3
LATERAL N - CHANNEL
MRF21030LR3 MRF21030LSR3
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
CASE 465F - 04, STYLE 1
2200 MHz, 30 W, 28 V
M3 (Minimum)
2 (Minimum)
- 65 to +150
MRF21030LSR3
MRF21030LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
83.3
0.48
150
200
NI - 400S
2.1
NI - 400
Rev. 12, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF21030LR3 Summary of contents

Page 1

... RF POWER MOSFETs CASE 465E - 04, STYLE 400 MRF21030LR3 CASE 465F - 04, STYLE 400S MRF21030LSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc 0.48 W/° +150 °C stg T 150 ° 200 °C J Symbol Value Unit R 2.1 °C/W θJC Class 2 (Minimum) M3 (Minimum) MRF21030LR3 MRF21030LSR3 1 ...

Page 2

... MHz and f1 = 2170.0 MHz 2170.1 MHz) Input Return Loss ( Vdc PEP 250 mA 2110.0 MHz, DD out 2110.1 MHz and f1 = 2170.0 MHz 2170.1 MHz) 1. Part is internally matched both on input and output. MRF21030LR3 MRF21030LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...

Page 3

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

Page 4

... Vdc 2140 MHz DD Two−Tone Measurement, 100 kHz Tone Spacing 13 1 OUTPUT POWER (WATTS) PEP out Figure 7. Power Gain versus Output Power MRF21030LR3 MRF21030LSR3 4 TYPICAL CHARACTERISTICS − Vdc −10 25 Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) −15 20 −20 ...

Page 5

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Test Matching Network Z Z source load Output Matching Network MRF21030LR3 MRF21030LSR3 5 ...

Page 6

... MRF21030LR3 MRF21030LSR3 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

... S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF21030LR3 MRF21030LSR3 9.9 4.14 7.24 1.14 0.15 1.7 3.1 10.3 10.3 3.3 10.3 10.3 7 ...

Page 8

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF21030LR3 MRF21030LSR3 Document Number: MRF21030 Rev. 12, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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