MRF8S9100HSR3 Freescale Semiconductor, MRF8S9100HSR3 Datasheet
MRF8S9100HSR3
Specifications of MRF8S9100HSR3
Available stocks
Related parts for MRF8S9100HSR3
MRF8S9100HSR3 Summary of contents
Page 1
... GSM, GSM EDGE LATERAL N- -CHANNEL RF POWER MOSFETs CASE 465- -06, STYLE 1 NI- -780 MRF8S9100HR3 CASE 465A- -06, STYLE 1 NI- -780S MRF8S9100HSR3 Symbol Value Unit V --0.5, +70 Vdc DSS V --6.0, +10 Vdc GS V 32, +0 Vdc DD T --65 to +150 °C stg T 150 ° 225 °C J MRF8S9100HR3 MRF8S9100HSR3 1 ...
Page 2
... MHz 960 MHz 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Part internally input matched. MRF8S9100HR3 MRF8S9100HSR3 2 = 500 500 700 25° ...
Page 3
... Vdc 700 mA Avg out SR1 SR2 @ 400 kHz @ 600 kHz (dBc) (dBc) --64.1 --74.5 --63.6 --74.6 --62.8 --75.1 MRF8S9100HR3 MRF8S9100HSR3 Unit W MHz MHz dB dB/°C dB/°C EVM (% rms) 1.8 2.0 2.3 3 ...
Page 4
... C13 1.8 pF Chip Capacitor C14 20 pF Chip Capacitor C15, C16 0.56 μ Chip Capacitors C20, C21, C22 470 μ Electrolytic Capacitors L1, L2 12.5 nH, 4 Turn Inductors R1 0 Ω Chip Resistor PCB 0.030″, ε = 2.55 r MRF8S9100HR3 MRF8S9100HSR3 C15 Description 2743019447 ATC100B470JT500XT ...
Page 5
... D 15 100 1 Figure 5. Power Gain and Drain Efficiency --5 30 -- --20 980 1000 --5 20 --10 4 --15 2 --20 0 980 1000 f = 940 MHz 960 MHz 960 MHz 940 MHz 920 MHz Vdc 500 100 P , OUTPUT POWER (WATTS) CW out versus Output Power MRF8S9100HR3 MRF8S9100HSR3 200 5 ...
Page 6
... MHz --65 --70 --75 -- OUTPUT POWER (WATTS) out Figure 8. Spectral Regrowth at 600 kHz versus Output Power --5 --10 --15 500 MRF8S9100HR3 MRF8S9100HSR3 6 TYPICAL CHARACTERISTICS -- Vdc EDGE Modulation --45 --50 --55 --60 --65 --70 940 960 980 1000 0 10 Figure 7. Spectral Regrowth at 400 kHz Vdc EDGE Modulation 960 MHz ...
Page 7
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Under Matching Network Test Z Z source load 400 kHz 600 kHz Span 2 MHz load Ω Output Matching Network MRF8S9100HR3 MRF8S9100HSR3 7 ...
Page 8
... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9100HR3 MRF8S9100HSR3 Vdc 500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 920 MHz f = 920 MHz f = 940 MHz f = 940 MHz f = 960 MHz INPUT POWER (dBm) in P1dB ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9100HR3 MRF8S9100HSR3 9 ...
Page 10
... MRF8S9100HR3 MRF8S9100HSR3 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF8S9100HR3 MRF8S9100HSR3 11 ...
Page 12
... MRF8S9100HR3 MRF8S9100HSR3 12 RF Device Data Freescale Semiconductor ...
Page 13
... The following table summarizes revisions to this document. Revision Date 0 Sept. 2009 • Initial Release of Data Sheet 1 Oct. 2010 • Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the device Device Data Freescale Semiconductor REVISION HISTORY Description MRF8S9100HR3 MRF8S9100HSR3 13 ...
Page 14
... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S9100HR3 MRF8S9100HSR3 Document Number: MRF8S9100H Rev. 1, 10/2010 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...