MRF6S23100HR3 Freescale Semiconductor, MRF6S23100HR3 Datasheet
MRF6S23100HR3
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MRF6S23100HR3 Summary of contents
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... W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF6S23100HR3 CASE 465A-06, STYLE 1 NI-780S MRF6S23100HSR3 Symbol Value Unit V -0.5, +68 Vdc DSS V -0.5, +12 Vdc GS °C T -65 to +150 stg °C T 150 C °C T 225 J (2,3) Symbol Value Unit °C/W R θJC 0.53 0.59 MRF6S23100HR3 MRF6S23100HSR3 1 ...
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... Carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S23100HR3 MRF6S23100HSR3 2 = 25°C unless otherwise noted) A Symbol I DSS I ...
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... Microstrip Z7 0.250″ x 0.611″ Microstrip Z8 0.060″ x 0.080″ Microstrip Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Ferrite Bead, Surface Mount C1, C2, C7, C8 5.6 pF Chip Capacitors, B Case 0.01 μF Chip Capacitor C3 2.2 μ ...
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... Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout MRF6S23100HR3 MRF6S23100HSR3 C10 C11 C12 C7 MRF6S23100 Rev 2.0 RF Device Data Freescale Semiconductor ...
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... Watts Avg. out 35.5 = 1000 mA 35 34.5 34 35.5 -25 -12 -27 -14 -29 -16 -31 -18 -20 -33 -22 -35 2400 = 40 Watts Avg. out = 28 Vdc 1500 mA = 500 mA DQ 1250 mA 750 mA 1000 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S23100HR3 MRF6S23100HSR3 100 300 5 ...
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... Vdc 1000 2350 MHz η 0 OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S23100HR3 MRF6S23100HSR3 6 TYPICAL CHARACTERISTICS P1dB = 51.18 dBm (131. 100 32 Figure 8. Pulsed CW Output Power versus η Vdc 1000 2345 MHz 2355 MHz T = 25_C ...
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... Software & Tools/Development Tools/Calculators to access MTTF calculators by product. W-CDMA TEST SIGNAL +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 - 210 230 250 = 23.5%. D 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW -IM3 in 3.84 MHz BW +IM3 in 3.84 MHz BW 3.84 MHz -15 - FREQUENCY (MHz) Figure 14. 2‐Carrier W‐CDMA Spectrum MRF6S23100HR3 MRF6S23100HSR3 ...
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... MHz Figure 15. Series Equivalent Source and Load Impedance MRF6S23100HR3 MRF6S23100HSR3 2300 MHz Z source Z load f = 2400 MHz f = 2300 MHz = 25 Ω Vdc 1000 mA Avg out source Ω MHz 2300 12.20 - j6.20 2.06 - j4.69 2310 12.06 - j6.40 2.04 - j4.62 2320 11.91 - j6.56 2.02 - j4.55 2330 11 ...
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... S S 0.365 0.375 9.27 9.52 (INSULATOR) U --- 0.040 --- 1. --- 0.030 --- 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S23100HR3 MRF6S23100HSR3 9.91 4.32 1.14 0.15 1.70 5.33 3.51 9.53 9.52 9 ...
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... Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps operating characteristics and location of MTTF calculator for device • Added Product Documentation and Revision History MRF6S23100HR3 MRF6S23100HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved. MRF6S23100HR3 MRF6S23100HSR3 11 ...