MRF7S18125BHR3 Freescale Semiconductor, MRF7S18125BHR3 Datasheet

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MRF7S18125BHR3

Manufacturer Part Number
MRF7S18125BHR3
Description
MOSFET RF N-CH CW 125W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S18125BHR3

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.1A
Voltage - Test
28V
Power - Output
125W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

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Manufacturer
Quantity
Price
Part Number:
MRF7S18125BHR3
Manufacturer:
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Quantity:
1 400
Part Number:
MRF7S18125BHR3
Manufacturer:
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Quantity:
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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW
• Typical P
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
125 Watts CW, f = 1930 MHz.
P
Output Power
Case Temperature 81°C, 125 W CW
Case Temperature 81°C, 71 W CW
out
Power Gain — 16.5 dB
Drain Efficiency — 55%
Power Gain — 17 dB
Drain Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 60 dBc
Spectral Regrowth @ 600 kHz Offset = - 74 dBc
EVM — 2.6% rms
calculators by product.
Select Documentation/Application Notes - AN1955.
= 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).
out
@ 1 dB Compression Point ] 140 Watts CW
(1,2)
DD
Characteristic
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 1100 mA, P
DQ
= 1100 mA,
Reel.
out
=
Symbol
Symbol
V
R
V
V
Document Number: MRF7S18125BH
T
MRF7S18125BHR3 MRF7S18125BHSR3
T
DSS
T
θJC
GS
DD
stg
C
J
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S18125BHSR3
1930- 1990 MHz, 125 W CW, 28 V
MRF7S18125BHR3
MRF7S18125BHR3
MRF7S18125BHSR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
GSM, GSM EDGE
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.31
0.35
150
225
(2,3)
Rev. 0, 11/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S18125BHR3 Summary of contents

Page 1

... LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF7S18125BHR3 CASE 465A - 06, STYLE 780S MRF7S18125BHSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 6.0, +10 Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.31 0.35 MRF7S18125BHR3 MRF7S18125BHSR3 1 ...

Page 2

... Power Gain Drain Efficiency Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S18125BHR3 MRF7S18125BHSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS ...

Page 3

... Vdc 1100 mA out — 17 — — 39 — — 2.6 — — — — — MRF7S18125BHR3 MRF7S18125BHSR3 Unit W MHz MHz dB ° ns ° dB/°C dBm/° rms dBc dBc 3 ...

Page 4

... Z5 0.092″ x 1.000″ Microstrip Z6 0.095″ x 1.000″ Microstrip Z7 0.565″ x 1.000″ Microstrip Figure 1. MRF7S18125BHR3(HSR3) Test Circuit Schematic Table 5. MRF7S18125BHR3(HSR3) Test Circuit Component Designations and Values Part C1 1 μ Chip Capacitor C2, C3, C4, C5 4.7 μ Chip Capacitors C6 220 μ Electrolytic Chip Capacitor C7, C8, C9, C10, C11 6 ...

Page 5

... C12 C13 C7 Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C16 C14 C15 C17 C4 C11 MRF7S18125BH Rev. 0 MRF7S18125BHR3 MRF7S18125BHSR3 C18 C10 C5 5 ...

Page 6

... Efficiency versus Frequency @ 1650 mA 1375 1100 mA 16 825 mA 550 Vdc 1960 MHz OUTPUT POWER (WATTS) CW out Figure 5. Power Gain versus Output Power MRF7S18125BHR3 MRF7S18125BHSR3 6 TYPICAL CHARACTERISTICS Vdc 125 W CW 1100 mA out η D IRL 1940 1950 1960 1970 f, FREQUENCY (MHz) = 125 Watts CW ...

Page 7

... W Avg Avg Avg. 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) 600 kHz versus Frequency 25_C 85_C T = −30_C Vdc 1100 1960 MHz, EDGE Modulation 100 120 140 160 P , OUTPUT POWER (WATTS) out versus Output Power MRF7S18125BHR3 MRF7S18125BHSR3 300 1990 180 200 7 ...

Page 8

... 1960 MHz, EDGE Modulation 20 85_C 16 12 −30_C η −30_C OUTPUT POWER (WATTS) AVG. out Figure 13. EVM and Drain Efficiency versus Output Power MRF7S18125BHR3 MRF7S18125BHSR3 8 TYPICAL CHARACTERISTICS 60 19 25_C 25_C 85_C 10 EVM 0 14 1930 100 500 Figure 14. Power Gain versus Frequency 9 ...

Page 9

... Center 1.96 GHz RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 16. EDGE Spectrum 400 kHz 600 kHz Span 2 MHz MRF7S18125BHR3 MRF7S18125BHSR3 9 ...

Page 10

... Figure 17. Series Equivalent Source and Load Impedance MRF7S18125BHR3 MRF7S18125BHSR3 Ω 2040 MHz Z load f = 1880 MHz f = 2040 MHz f = 1880 MHz Z source Vdc 1100 mA 125 out source load MHz W W 1880 1.31 - j3.61 1.32 - j3.06 1900 1.25 - j3.06 1.30 - j2.92 1920 1.21 - j3.30 1 ...

Page 11

... P1dB = 52.89 dBm (194 Vdc 1100 mA, Pulsed μsec(on), 10% Duty Cycle, f =1960 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source Ω P1dB 0.65 - j4.06 0.73 - j2.62 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual load Ω MRF7S18125BHR3 MRF7S18125BHSR3 11 ...

Page 12

... (FLANGE) D bbb (INSULATOR) bbb N (LID) ccc (FLANGE (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S18125BHR3 MRF7S18125BHSR3 12 PACKAGE DIMENSIONS Q 2X bbb ccc aaa SEATING T PLANE CASE 465 - 06 ISSUE 780 MRF7S18125BHR3 Z 4X (LID ccc aaa CASE 465A - 06 ISSUE 780S ...

Page 13

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S18125BHR3 MRF7S18125BHSR3 13 ...

Page 14

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S18125BHR3 MRF7S18125BHSR3 Document Number: MRF7S18125BH Rev. 0, 11/2008 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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