MRF7S18125BHSR3 Freescale Semiconductor, MRF7S18125BHSR3 Datasheet - Page 7

• Manufacturer Part Number: MRF7S18125BHSR3
• Description: MOSFET RF N-CH CW 125W NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18125BHSR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 125W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 57W
• Power Gain (typ)@vds: 17dB
• Frequency (min): 1.8GHz
• Frequency (max): 2GHz
• Package Type: Case 465A-06
• Pin Count: 3
• Input Capacitance (typ)@vds: 309@28VpF
• Output Capacitance (typ)@vds: 673@28VpF
• Reverse Capacitance (typ): 1.15@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
60
59
58
57
56
55
54
53
52
51
50
6
5
4
3
2
1
0
1930
−35
−40
−45
−50
−55
−60
−65
−70
−75
33
0
P1dB = 51.61 dBm
(145 W)
P3dB = 52.16 dBm (164.4 W)
V
I
EDGE Modulation
DQ
DD
Figure 7. Pulsed CW Output Power versus
Figure 11. Spectral Regrowth at 400 kHz
34
= 1100 mA
= 28 Vdc
20
1940
Figure 9. EVM versus Frequency
P6dB = 52.59 dBm (181.6 W)
35
40
P
1950
versus Output Power
36
out
P
60
85_C
in
f, FREQUENCY (MHz)
, OUTPUT POWER (WATTS)
, INPUT POWER (dBm)
V
12 μsec(on), 1% Duty Cycle, f = 1960 MHz
DD
Input Power
P
37
50 W Avg.
18 W Avg.
out
80
= 28 Vdc, I
= 78 W Avg.
1960
T
C
25_C
38
100
= −30_C
DQ
39
120
= 1100 mA, Pulsed CW
1970
V
I
f = 1960 MHz
EDGE Modulation
40
DQ
140
DD
= 1100 mA
= 28 Vdc
TYPICAL CHARACTERISTICS
1980
41
160
Ideal
Actual
42
180
1990
43
200
17.5
16.5
15.5
14.5
13.5
18
17
16
15
14
13
10
−50
−55
−60
−65
−70
−75
−80
−45
−50
−55
−60
−65
−70
−75
−80
−85
G
1930
ps
Figure 8. Power Gain and Drain Efficiency
0
SR @ 600 kHz
Figure 10. Spectral Regrowth at 400 kHz and
η
SR @ 400 kHz
D
20
Figure 12. Spectral Regrowth at 600 kHz
T
C
1940
85_C
25_C
= −30_C
P
out
40
versus Output Power
600 kHz versus Frequency
, OUTPUT POWER (WATTS) CW
MRF7S18125BHR3 MRF7S18125BHSR3
78 W Avg.
P
1950
versus Output Power
60
18 W Avg.
out
f, FREQUENCY (MHz)
, OUTPUT POWER (WATTS)
50 W Avg.
85_C
V
I
f = 1960 MHz
P
50 W Avg.
DQ
80
DD
out
= 1100 mA
= 28 Vdc
= 78 W Avg.
1960
100
V
f = 1960 MHz, EDGE Modulation
DD
= 28 Vdc, I
T
100
C
120
25_C
= −30_C
18 W Avg.
1970
140
DQ
V
I
EDGE Modulation
DQ
DD
−30_C
= 1100 mA
= 1100 mA
25_C
= 28 Vdc
85_C
160
1980
300
180
65
60
55
50
45
40
35
30
25
20
15
1990
200
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