MRF7S18125BHSR5 Freescale Semiconductor, MRF7S18125BHSR5 Datasheet

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MRF7S18125BHSR5

Manufacturer Part Number
MRF7S18125BHSR5
Description
MOSFET RF N-CH CW 125W NI780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S18125BHSR5

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.1A
Voltage - Test
28V
Power - Output
125W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7S18125BHSR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW
• Typical P
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
125 Watts CW, f = 1930 MHz.
P
Output Power
Case Temperature 81°C, 125 W CW
Case Temperature 81°C, 71 W CW
out
Power Gain — 16.5 dB
Drain Efficiency — 55%
Power Gain — 17 dB
Drain Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 60 dBc
Spectral Regrowth @ 600 kHz Offset = - 74 dBc
EVM — 2.6% rms
calculators by product.
Select Documentation/Application Notes - AN1955.
= 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).
out
@ 1 dB Compression Point ] 140 Watts CW
(1,2)
DD
Characteristic
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 1100 mA, P
DQ
= 1100 mA,
Reel.
out
=
Symbol
Symbol
V
R
V
V
Document Number: MRF7S18125BH
T
MRF7S18125BHR3 MRF7S18125BHSR3
T
DSS
T
θJC
GS
DD
stg
C
J
CASE 465 - 06, STYLE 1
CASE 465A - 06, STYLE 1
MRF7S18125BHSR3
1930- 1990 MHz, 125 W CW, 28 V
MRF7S18125BHR3
MRF7S18125BHR3
MRF7S18125BHSR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
NI - 780S
GSM, GSM EDGE
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.31
0.35
150
225
(2,3)
Rev. 0, 11/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF7S18125BHSR5

MRF7S18125BHSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 1100 mA, P ...

Page 2

... Vdc — 2.7 — Vdc 4 5.3 7 Vdc 0.1 0.2 0.3 Vdc — 1.15 — pF — 673 — pF — 309 — 125 W CW 1930 MHz out 15 16 — % — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V Avg., 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol = 28 Vdc P1dB ...

Page 4

... Microstrip 0.227″ x 0.083″ Microstrip 1.280″ x 0.080″ Microstrip 0.760″ x 0.080″ Microstrip Taconic TLX - 8 RF35, 0.031″, ε = 2.55 r Part Number Manufacturer AVX Murata Vishay ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 5

... C12 C13 C7 Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C16 C14 C15 C17 C4 C11 MRF7S18125BH Rev. 0 MRF7S18125BHR3 MRF7S18125BHSR3 C18 C10 C5 5 ...

Page 6

... Vdc 125 W (PEP) out = 1100 mA, Two−Tone Measurements IM3−U IM3−L IM5−U IM5−L IM7−U IM7− TWO−TONE SPACING (MHz) versus Two - Tone Spacing RF Device Data Freescale Semiconductor 100 ...

Page 7

... T = −30_C C −60 −65 −70 − 100 120 P , OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 400 kHz versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Ideal 17 15.5 15 14.5 Actual 14 η Figure 8. Power Gain and Drain Efficiency − ...

Page 8

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature T = −30_C C 25_C 85_C Vdc 125 W CW out I = 1100 mA DQ 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) 210 230 250 = 55 Device Data Freescale Semiconductor 1990 ...

Page 9

... Center 1.96 GHz RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 16. EDGE Spectrum 400 kHz 600 kHz ...

Page 10

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 11

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ Device Data Freescale Semiconductor P6dB = 54.29 dBm (268.5 W) P3dB = 53.76 dBm (237.7 W) P1dB = 52.89 dBm (194 Vdc 1100 mA, Pulsed μsec(on), 10% Duty Cycle, f =1960 MHz ...

Page 12

... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 13

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S18125BHR3 MRF7S18125BHSR3 13 ...

Page 14

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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