MRF7S18125BHSR5 Freescale Semiconductor, MRF7S18125BHSR5 Datasheet
MRF7S18125BHSR5
Specifications of MRF7S18125BHSR5
Available stocks
Related parts for MRF7S18125BHSR5
MRF7S18125BHSR5 Summary of contents
Page 1
... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 1100 mA, P ...
Page 2
... Vdc — 2.7 — Vdc 4 5.3 7 Vdc 0.1 0.2 0.3 Vdc — 1.15 — pF — 673 — pF — 309 — 125 W CW 1930 MHz out 15 16 — % — (continued) RF Device Data Freescale Semiconductor ...
Page 3
... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V Avg., 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol = 28 Vdc P1dB ...
Page 4
... Microstrip 0.227″ x 0.083″ Microstrip 1.280″ x 0.080″ Microstrip 0.760″ x 0.080″ Microstrip Taconic TLX - 8 RF35, 0.031″, ε = 2.55 r Part Number Manufacturer AVX Murata Vishay ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...
Page 5
... C12 C13 C7 Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C16 C14 C15 C17 C4 C11 MRF7S18125BH Rev. 0 MRF7S18125BHR3 MRF7S18125BHSR3 C18 C10 C5 5 ...
Page 6
... Vdc 125 W (PEP) out = 1100 mA, Two−Tone Measurements IM3−U IM3−L IM5−U IM5−L IM7−U IM7− TWO−TONE SPACING (MHz) versus Two - Tone Spacing RF Device Data Freescale Semiconductor 100 ...
Page 7
... T = −30_C C −60 −65 −70 − 100 120 P , OUTPUT POWER (WATTS) out Figure 11. Spectral Regrowth at 400 kHz versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Ideal 17 15.5 15 14.5 Actual 14 η Figure 8. Power Gain and Drain Efficiency − ...
Page 8
... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature T = −30_C C 25_C 85_C Vdc 125 W CW out I = 1100 mA DQ 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) 210 230 250 = 55 Device Data Freescale Semiconductor 1990 ...
Page 9
... Center 1.96 GHz RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 16. EDGE Spectrum 400 kHz 600 kHz ...
Page 10
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...
Page 11
... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ Device Data Freescale Semiconductor P6dB = 54.29 dBm (268.5 W) P3dB = 53.76 dBm (237.7 W) P1dB = 52.89 dBm (194 Vdc 1100 mA, Pulsed μsec(on), 10% Duty Cycle, f =1960 MHz ...
Page 12
... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...
Page 13
... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S18125BHR3 MRF7S18125BHSR3 13 ...
Page 14
... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...