MRF377HR3 Freescale Semiconductor, MRF377HR3 Datasheet - Page 2

• Manufacturer Part Number: MRF377HR3
• Description: MOSFET RF N-CHAN 32V 45W NI-860C
• Manufacturer: Freescale Semiconductor

Specifications of MRF377HR3

• Transistor Type: N-Channel
• Frequency: 860MHz
• Gain: 18.2dB
• Voltage - Rated: 65V
• Current Rating: 17A
• Current - Test: 2A
• Voltage - Test: 32V
• Power - Output: 45W
• Package / Case: NI-860C3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF377HR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
Typical Performances
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
Human Body Model
Machine Model
Charge Device Model
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Common Source Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Common Source Power Gain
(V
(V
(V
(V
(V
(V
(V
(V
f = 860 MHz)
(V
f = 860 MHz)
(V
f = 860 MHz)
(V
GS
DS
GS
DS
DS
GS
DS
DD
DD
DD
DD
= 32 Vdc, V
= 10 Vdc, I
= 32 Vdc, I
= 28 Vdc, V
= 0 Vdc, I
= 5 Vdc, V
= 10 Vdc, I
= 32 Vdc, P
= 32 Vdc, P
= 32 Vdc, P
= 32 Vdc, P
(3)
D
DS
D
D
D
(1)
(In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
=10 μA)
GS
GS
out
out
out
out
= 200 μA)
= 2000 mAdc)
= 3 A)
= 0 Vdc)
(3)
= 0 Vdc)
= 0, f = 1 MHz)
= 45 W Avg., I
= 45 W Avg., I
= 45 W Avg., I
= 45 W Avg., I
Characteristic
(3)
(In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
(1,2)
(1)
Test Conditions
(4)
(4)
DQ
DQ
DQ
DQ
(T
= 2000 mA,
= 2000 mA,
= 2000 mA,
= 2000 mA)
C
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
= 25°C unless otherwise noted)
V
Symbol
V
V
V
ACPR
(BR)DSS
I
I
DS(on)
C
GS(th)
GS(Q)
G
G
DSS
GSS
η
rss
ps
D
ps
16.5
Min
2.5
65
21
—
—
—
—
—
—
—
—
—
—
—
- 59.2
0.27
18.2
22.9
17.6
17.6
17.4
17.4
16.8
Typ
2.8
3.5
3.2
—
—
—
M3 (Minimum)
1 (Minimum)
7 (Minimum)
Class
Freescale Semiconductor
Max
4.5
- 57
—
—
—
—
—
—
—
—
—
—
—
1
1
RF Device Data
(continued)
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
pF
dB
dB
%