MRF377HR5 Freescale Semiconductor, MRF377HR5 Datasheet

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MRF377HR5

Manufacturer Part Number
MRF377HR5
Description
MOSFET N-CH 32V 240W RF PWR
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF377HR5

Transistor Type
N-Channel
Frequency
860MHz
Gain
18.2dB
Voltage - Rated
65V
Current Rating
17A
Current - Test
2A
Voltage - Test
32V
Power - Output
45W
Package / Case
NI-860C3
Noise Figure
-
Other names
Q2202731
Q3031314
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
I
I
Output Power
DQ
DQ
Derate above 25°C
Derate above 25°C
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
calculators by product.
Select Documentation/Application Notes - AN1955.
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ - 58 dBc
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≥ - 31.3 dBc
= 2000 mA, 8K Mode, 64 QAM
= 2000 mA
C
= 25°C
C
= 25°C
Characteristic
Rating
μ
″ Nominal.
Symbol
Symbol
V
R
V
T
CW
P
T
DSS
T
I
θJC
GS
stg
D
D
C
J
470 - 860 MHz, 45 W AVG., 32 V
Document Number: MRF377H
CASE 375G - 04, STYLE 1
MRF377HR3
LATERAL N - CHANNEL
RF POWER MOSFET
- 65 to +150
Value
- 0.5, +65
- 0.5, +15
Value
1.38
0.27
0.29
648
150
200
235
3.7
NI - 860C3
17
(1,2)
Rev. 2, 3/2009
MRF377HR3
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
W
1

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MRF377HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2009. All rights reserved. RF Device Data Freescale Semiconductor ″ Nominal. ...

Page 2

... RF Device Data Freescale Semiconductor Unit Vdc μAdc μAdc Vdc Vdc Vdc dBc dB ...

Page 3

... Vdc Avg out DQ Intermodulation Distortion ( Vdc Avg out DQ 1. Measurement made with device in push - pull configuration. RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol η 2000 mA 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ACPR = 2000 mA) ...

Page 4

... C24 V GG Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout ...

Page 5

... 859.95 MHz 860.05 MHz −80 10 100 P , OUTPUT POWER (WATTS) PEP out Figure 4. Intermodulation Distortion Products versus Output Power Device Data Freescale Semiconductor −20 −30 −40 1600 mA −50 −60 −70 10 Figure 3. Third Order Intermodulation Distortion Figure 5. Two - Tone Drain Efficiency versus ...

Page 6

... Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input Under + − Matching Test Network − source load f = 875 MHz = 10 Ω load Ω Output Matching Network RF Device Data Freescale Semiconductor ...

Page 7

... C33, C34 470 μ Electrolytic Capacitors L1 Inductors (0603) L3 Inductors (0603) L5 Coil Inductors Coil Inductor L8 18.5 nH Coil Inductor R1, R2 12.1 Ω, 1/16 W, Chip Resistors RF Device Data Freescale Semiconductor Description 2506033007Y0 = 6.06 06035J120GBS 08051J120GBS 08051J3R9BBS 08051J8R2BBS 08051J3R3BBS 27283PC 06035J3R3BBS 08051J100GBS 08051J4R7BBS 06035J2R2BBS 08051J2R2BBS ...

Page 8

... GG C21 DS1047 Rev 4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Topside View Figure 8 ...

Page 9

... QAM −66 Data Carrier Modulation 5 Symbols − OUTPUT POWER (WATTS) AVG. out Figure 12. Single - Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power RF Device Data Freescale Semiconductor G ps η Vdc (Avg.), I = 2000 mA DD out DQ 8K Mode DVBT OFDM ...

Page 10

... MHz 560 MHz 660 MHz 760 MHz 860 MHz 10 100 P , OUTPUT POWER (WATTS) AVG. out Reference Point 3.25 MHz 3.25 MHz Offset Offset −0.8 0 0.8 1.6 2.4 3.2 f, FREQUENCY (MHz) Figure 18. ATSC 8VSB Spectrum RF Device Data Freescale Semiconductor IMRU 4.0 ...

Page 11

... MHz = 10 Ω Optimized for V Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 860 MHz = 2000 mA Avg., DVBT OFDM DD DQ out f Z source MHz Ω 470 5.79 - j2.40 6.21 - j1.69 560 6.63 - j2.63 5 ...

Page 12

... N 0.851 0.869 21.62 22.07 Q 0.118 0.138 3.00 3.30 R 0.395 0.405 10.03 10.29 S 0.394 0.406 10.01 10.31 bbb 0.010 REF 0.25 REF T SEATING ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 13

... The following table summarizes revisions to this document. Revision Date 2 Mar. 2009 • Data sheet revised to reflect part status change, removing MRF377HR5. Refer to PCN13170. (See Rev. 1 data sheet for MRF377HR5.) • Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part numbers • Added Revision History ...

Page 14

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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