MRF373ALR5 Freescale Semiconductor, MRF373ALR5 Datasheet

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MRF373ALR5

Manufacturer Part Number
MRF373ALR5
Description
MOSFET RF N-CHAN 32V 75W NI-360
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF373ALR5

Transistor Type
N-Channel
Frequency
860MHz
Gain
18.2dB
Voltage - Rated
70V
Current Rating
1µA
Current - Test
200mA
Voltage - Test
32V
Power - Output
75W
Package / Case
NI-360
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Freescale Semiconductor
RF Product Device Data
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
• Low Gold Plating Thickness on Leads.
• RoHS Compliant
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
75 Watts CW Output Power
Impedance Parameters
L Suffix Indicates 40μ″ Nominal.
Derate above 25°C
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
C
= 25°C
Test Conditions
Characteristic
Rating
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF373A
MRF373ALSR1
470 - 860 MHz, 75 W, 32 V
MRF373ALR1
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
LATERAL N - CHANNEL
RF POWER MOSFETs
MRF373ALR1 MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
1 (Minimum)
- 65 to +150
- 0.5, +70
- 0.5, +15
MRF373ALSR1
MRF373ALR1
BROADBAND
Class
Value
Value
1.12
1.59
0.89
0.63
197
278
150
200
NI - 360S
NI - 360
Rev. 7, 9/2008
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
W
1

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MRF373ALR5 Summary of contents

Page 1

... Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. Freescale Semiconductor RF Product Device Data Symbol V DSS V ...

Page 2

... G ps η Min Typ Max 70 — — — — 1 — — 2.9 4 2.5 3.3 4.5 — 0.41 0.45 — 98.5 — — 49 — — 2 — 16.5 18.2 — — Freescale Semiconductor RF Product Device Data Unit Vdc μAdc μAdc Vdc Vdc Vdc ...

Page 3

... RF INPUT C10 C9 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Table 5 ...

Page 4

... Figure 2. Power Gain versus Output Power = 32 Vdc DD η (CW) out = 200 mA DQ IRL G ps 820 840 860 880 f, FREQUENCY (MHz) Figure 3. Performance in Narrowband Circuit C iss C oss C rss DRAIN SOURCE VOLTAGE (VOLTS) DS Figure 4. Capacitance versus Voltage = 32 Vdc 100 900 920 Freescale Semiconductor RF Product Device Data ...

Page 5

... Figure 5. Series Equivalent Source and Load Impedance Freescale Semiconductor RF Product Device Data = 2 Ω source f = 875 MHz f = 845 MHz 200 mA out source MHz Ω 845 0.58 - j0.29 1.60 + j0.07 860 0.56 - j0.11 1.65 + j0.22 875 0.56 + j0.06 1.79 + j0. Test circuit impedance as measured from source gate to ground ...

Page 6

... Q 0.125 0.135 3.18 3.43 R 0.227 0.233 5.77 5.92 S 0.225 0.235 5.72 5.97 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Freescale Semiconductor RF Product Device Data ...

Page 7

... Freescale Semiconductor RF Product Device Data MRF373ALR1 MRF373ALSR1 7 ...

Page 8

... MRF373ALR1 MRF373ALSR1 8 Freescale Semiconductor RF Product Device Data ...

Page 9

... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 7 Sept. 2008 • Replaced Case Outline 360C - 05, Issue E with Issue • Added Product Documentation and Revision History Freescale Semiconductor RF Product Device Data PRODUCT DOCUMENTATION REVISION HISTORY Description MRF373ALR1 MRF373ALSR1 9 ...

Page 10

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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