MRF373ALSR1 Freescale Semiconductor, MRF373ALSR1 Datasheet

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MRF373ALSR1

Manufacturer Part Number
MRF373ALSR1
Description
MOSFET RF N-CHAN 32V 75W NI-360S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF373ALSR1

Transistor Type
N-Channel
Frequency
860MHz
Gain
18.2dB
Voltage - Rated
70V
Current Rating
1µA
Current - Test
200mA
Voltage - Test
32V
Power - Output
75W
Package / Case
NI-360S
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
70V
Power Gain (typ)@vds
18.2dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-360S
Pin Count
3
Input Capacitance (typ)@vds
98.5@32VpF
Output Capacitance (typ)@vds
49@32VpF
Reverse Capacitance (typ)
2@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Surface Mount
Mode Of Operation
CW
Number Of Elements
1
Power Dissipation (max)
278000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Freescale Semiconductor
RF Product Device Data
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
• Low Gold Plating Thickness on Leads.
• RoHS Compliant
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
75 Watts CW Output Power
Impedance Parameters
L Suffix Indicates 40μ″ Nominal.
Derate above 25°C
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
C
= 25°C
Test Conditions
Characteristic
Rating
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF373A
MRF373ALSR1
470 - 860 MHz, 75 W, 32 V
MRF373ALR1
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
LATERAL N - CHANNEL
RF POWER MOSFETs
MRF373ALR1 MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
1 (Minimum)
- 65 to +150
- 0.5, +70
- 0.5, +15
MRF373ALSR1
MRF373ALR1
BROADBAND
Class
Value
Value
1.12
1.59
0.89
0.63
197
278
150
200
NI - 360S
NI - 360
Rev. 7, 9/2008
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
W
1

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MRF373ALSR1 Summary of contents

Page 1

... RF POWER MOSFETs CASE 360B - 05, STYLE 360 MRF373ALR1 CASE 360C - 05, STYLE 360S MRF373ALSR1 Value Unit - 0.5, +70 Vdc - 0.5, +15 Vdc 197 W 1.12 W/°C 278 W 1.59 W/° +150 °C 150 °C 200 °C Value Unit 0.89 °C/W 0.63 Class 1 (Minimum) M2 (Minimum) M1 (Minimum) MRF373ALR1 MRF373ALSR1 1 ...

Page 2

... DS GS Reverse Transfer Capacitance ( MHz Functional Characteristics (50 ohm system) Common Source Power Gain ( CW 200 mA 860 MHz) DD out DQ Drain Efficiency ( CW 200 mA 860 MHz) DD out DQ MRF373ALR1 MRF373ALSR1 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) V GS(Q) V DS(on) C iss C oss C rss G ps η ...

Page 3

... Chip Capacitor 1000 pF Chip Capacitor 39 pF Chip Capacitor 470 pF Chip Capacitors 2.2 mF, 100 V Chip Capacitor 10 mF Tantalum Capacitor 12 nH, Coilcraft 390 Ω, 1/2 W Chip Resistors (2010) 1 kΩ, 1/2 W Chip Resistor (2010) Arlon GX - 0300- 55, 30 mils, ε OUTPUT MRF373ALR1 MRF373ALSR1 3 ...

Page 4

... 800 200 150 100 MRF373ALR1 MRF373ALSR1 4 TYPICAL CHARACTERISTICS 860 MHz I = 500 mA DQ 400 mA 300 mA 200 mA 100 OUTPUT POWER (WATTS) CW out Figure 2. Power Gain versus Output Power = 32 Vdc DD η (CW) out = 200 mA DQ IRL G ps 820 840 860 880 f, FREQUENCY (MHz) Figure 3. Performance in Narrowband Circuit ...

Page 5

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Z load f = 875 MHz f = 845 MHz load Ω Output Matching Network MRF373ALR1 MRF373ALSR1 5 ...

Page 6

... (FLANGE bbb ccc T M (LID SEATING T PLANE M bbb (INSULATOR MRF373ALR1 MRF373ALSR1 6 PACKAGE DIMENSIONS Q aaa (LID) ccc (INSULATOR) aaa CASE 360B - 05 ISSUE 360 MRF373ALR1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY ...

Page 7

... Freescale Semiconductor RF Product Device Data MRF373ALR1 MRF373ALSR1 7 ...

Page 8

... MRF373ALR1 MRF373ALSR1 8 Freescale Semiconductor RF Product Device Data ...

Page 9

... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 7 Sept. 2008 • Replaced Case Outline 360C - 05, Issue E with Issue • Added Product Documentation and Revision History Freescale Semiconductor RF Product Device Data PRODUCT DOCUMENTATION REVISION HISTORY Description MRF373ALR1 MRF373ALSR1 9 ...

Page 10

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF373ALR1 MRF373ALSR1 Document Number: MRF373A Rev. 7, 9/2008 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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