MRF6S9045NBR1 Freescale Semiconductor, MRF6S9045NBR1 Datasheet

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MRF6S9045NBR1

Manufacturer Part Number
MRF6S9045NBR1
Description
MOSFET RF N-CH 28V 10W TO-272-2
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S9045NBR1

Transistor Type
N-Channel
Frequency
880MHz
Gain
22.7dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
350mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-272-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
GSM EDGE Application
• Typical GSM EDGE Performance: V
GSM Application
• Typical GSM Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
I
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
P
Full Frequency Band (921 - 960 MHz)
Output Power
13 inch Reel.
13 inch Reel.
DQ
out
Power Gain — 20 dB
Drain Efficiency — 68%
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
MTTF calculators by product.
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
= 350 mA, P
= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
out
= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
(1,2)
DD
= 28 Volts, I
Rating
DD
= 28 Volts, I
DQ
= 350 mA, P
DQ
= 350 mA,
out
DD
= 45 Watts,
= 28 Volts,
Symbol
V
V
T
T
DSS
T
GS
stg
C
BROADBAND RF POWER MOSFETs
J
Document Number: MRF6S9045N
MRF6S9045NBR1
MRF6S9045NR1 MRF6S9045NBR1
MRF6S9045NR1
880 MHz, 10 W AVG., 28 V
LATERAL N - CHANNEL
CASE 1265 - 09, STYLE 1
CASE 1337 - 04, STYLE 1
SINGLE N - CDMA
MRF6S9045NR1
- 65 to +150
MRF6S9045NBR1
- 0.5, +68
- 0.5, + 12
TO - 270- 2
Value
PLASTIC
150
225
TO - 272- 2
PLASTIC
Rev. 4, 8/2008
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S9045NBR1

MRF6S9045NBR1 Summary of contents

Page 1

... Freescale Semiconductor Technical Data MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment ...

Page 2

... Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9045NR1 MRF6S9045NBR1 2 Rating 3 = 25°C unless otherwise noted) Symbol ...

Page 3

... C Symbol G ps η D EVM SR1 SR2 G ps η D IRL P1dB Min Typ Max Unit — 20 — dB — 46 — % — 1.5 — % — — dBc — — dBc = 28 Vdc, DD — 20 — dB — 68 — % — — dB — 52 — W MRF6S9045NR1 MRF6S9045NBR1 3 ...

Page 4

... C13 0.6- 4.5 pF Variable Capacitor, Gigatrim C15, C16, C17 10 μ Tantalum Capacitors C18 220 μ Electrolytic Capacitor L1, L2 12.5 nH Inductor R1 1 kΩ, 1/4 W Chip Resistor R2 560 kΩ, 1/4 W Chip Resistor R3 12 Ω, 1/4 W Chip Resistor MRF6S9045NR1 MRF6S9045NBR1 Z10 DUT Z10 Z11 ...

Page 5

... C15 Figure 2. MRF6S9045NR1(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C7 C10 C11 C9 C18 V DD C16 C17 B2 C14 C13 C12 TO−270/272 Surface / Bolt down MRF6S9045NR1 MRF6S9045NBR1 5 ...

Page 6

... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S9045NR1 MRF6S9045NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 350 mA, N−CDMA IS−95 Pilot DQ Sync, Paging, Traffic Codes 8 Through 13 ACPR IRL ...

Page 7

... OUTPUT POWER (WATTS) AVG. out Gain and Drain Efficiency versus Output Power = 28 Vdc (PEP 350 mA out DQ 5th Order 7th Order 0 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −25 η D 25_C −35 −30_C −45 25_C −55 −30_C −65 −75 −85 50 MRF6S9045NR1 MRF6S9045NBR1 100 7 ...

Page 8

... Figure 13. MTTF Factor versus Junction Temperature MRF6S9045NR1 MRF6S9045NBR1 8 TYPICAL CHARACTERISTICS −30_C −30_C C 25_C 85_C η Vdc 350 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power OUTPUT POWER (WATTS) CW out Figure 12 ...

Page 9

... FREQUENCY (MHz) MRF6S9045NR1 MRF6S9045NBR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...

Page 10

... MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRF6S9045NR1 MRF6S9045NBR1 Ω 850 MHz Z load f = 910 MHz Vdc 350 mA Avg out source load MHz Ω Ω 850 0.42 + j0.30 3.05 + j1.27 865 0.42 + j0.44 3.16 + j1.33 880 ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S9045NR1 MRF6S9045NBR1 11 ...

Page 12

... MRF6S9045NR1 MRF6S9045NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 13 ...

Page 14

... MRF6S9045NR1 MRF6S9045NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S9045NR1 MRF6S9045NBR1 15 ...

Page 16

... MRF6S9045NR1 MRF6S9045NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Aug. 2008 • Listed replacement part and Device Migration notification reference number • Listed MRF6S9045NBR1 as no longer manufactured • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue 13. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min ...

Page 18

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S9045NR1 MRF6S9045NBR1 Document Number: MRF6S9045N Document Number: MRF6S9045N Rev. 4, 8/2008 Rev ...

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