MRF6S9125MBR1 Freescale Semiconductor, MRF6S9125MBR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S9125MBR1
• Description: MOSFET RF N-CH 28V 27W TO-272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S9125MBR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 20.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 27W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

2
MRF6S9125MR1 MRF6S9125MBR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2. Part is internally input matched.
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 400 µAdc)
= 950 mAdc)
= 2.74 Adc)
= 8 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(2)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
= 950 mA, P
IRL
DSS
DSS
GSS
g
η
3
oss
rss
fs
ps
D
Symbol
R
out
0.05
Min
Package Peak Temperature
19
29
—
—
—
—
—
—
—
—
θJC
1
2
= 27 W, f = 880 MHz
- 47.1
2.89
0.23
20.2
260
Typ
2.1
- 16
—
—
—
60
31
1B (Minimum)
6
2
IV (Minimum)
C (Minimum)
Value
Class
Freescale Semiconductor
0.44
0.45
(1)
Max
- 45
0.3
10
—
—
—
24
—
- 9
1
1
3
4
RF Device Data
(continued)
°C/W
µAdc
µAdc
µAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
dBc
pF
pF
dB
dB
°C
%
S