MRF9085LSR3 Freescale Semiconductor, MRF9085LSR3 Datasheet

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MRF9085LSR3

Manufacturer Part Number
MRF9085LSR3
Description
IC MOSFET RF N-CHAN NI-780S
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9085LSR3

Transistor Type
N-Channel
Frequency
880MHz
Gain
17.9dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
700mA
Voltage - Test
26V
Power - Output
105W
Package / Case
NI-780S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF9085LSR3
Manufacturer:
MAXIM
Quantity:
26
Part Number:
MRF9085LSR3
Manufacturer:
MOT
Quantity:
240
Part Number:
MRF9085LSR3
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
REV 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
40µ″ Nominal.
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9085
MRF9085SR3/MRF9085LSR3
DQ
= 700 mA
MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
MRF9085SR3, MRF9085LSR3
CASE 465–06, STYLE 1
MRF9085LSR3
CASE 465A–06, STYLE 1
MRF9085SR3
MRF9085R3
LATERAL N–CHANNEL
RF POWER MOSFETs
MRF9085
880 MHz, 90 W, 26 V
MRF9085
NI–780)
NI–780S
M2 (Minimum)
M1 (Minimum)
1 (Minimum)
–65 to +150
–0.5, +15
Value
Class
1.43
Max
250
200
0.7
65
Order this document
by MRF9085/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9085LSR3 Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2003 = 700 mA DQ MRF9085 MRF9085SR3/MRF9085LSR3 MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 Order this document by MRF9085/D MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 880 MHz LATERAL N–CHANNEL RF POWER MOSFETs CASE 465– ...

Page 2

... Adc Forward Transconductance ( Vdc Adc DYNAMIC CHARACTERISTICS (1) Output Capacitance = 26 Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance = 26 Vdc ± 30 mV(rms) MHz (1) Part is internally input matched. MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 2 = 25°C unless otherwise noted) Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V DS(on ...

Page 3

... IRL — G — ps η — IMD — IRL — P — 1dB G — ps η — Ψ No Degradation In Output Power P — 1dB MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 Typ Max Unit 17.9 — — % –31 –28 dBc –21 –9 dB 17.9 — dB 40.0 — % –31 — ...

Page 4

... Microstrip Z5 0.123″ x 0.220″ Microstrip Figure 1. 865–895 MHz Broadband Test Circuit Schematic Figure 2. 865–895 MHz Broadband Test Circuit Component Layout MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 4 Z6 0.076″ x 0.220″ Microstrip Z7 0.261″ x 0.220″ Microstrip Z8 0.220″ ...

Page 5

... Figure 3. Class AB Broadband Circuit Performance h Figure 4. Power Gain, Efficiency, IMD versus Output Power h Figure 6. Power Gain, Efficiency versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS h Figure 5. Intermodulation Distortion Products h Figure 7. Power Gain, Efficiency, ACPR versus MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 versus Output Power Output Power 5 ...

Page 6

... Z source Z load Figure 8. Series Equivalent Input and Output Impedance MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 6 Ω source load Ω Ω MHz 865 1.35 – j1.92 1.26 – j0.15 880 1.33 – j1.66 1.26 – j0.10 895 1.28 – j1.30 1.21 – j0.20 = Test circuit impedance as measured from gate to ground ...

Page 7

... MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS (LID) S (INSULATOR) SEATING T PLANE CASE 465–06 ISSUE F NI–780 MRF9085 Z R (LID) S (INSULATOR) CASE 465A–06 ISSUE F NI–780S MRF9085SR3, MRF9085LSR3 MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa F bbb ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors ◊ MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 8 MOTOROLA RF DEVICE DATA MRF9085/D ...

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