MRF8P20160HR3 Freescale Semiconductor, MRF8P20160HR3 Datasheet

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MRF8P20160HR3

Manufacturer Part Number
MRF8P20160HR3
Description
DISCRETE RF FET
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P20160HR3

Transistor Type
2 N-Channel (Dual)
Frequency
1.92GHz
Gain
16.5dB
Voltage - Rated
65V
Current - Test
550mA
Voltage - Test
28V
Power - Output
37W
Package / Case
NI-780H-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8P20160HR3
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
• Typical P
2025 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for CDMA base station applications with frequencies from 1880 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Output Power (3 dB Input Overdrive from Rated P
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Source S--Parameters
Operation
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
DQA
DQA
calculators by product.
= 550 mA, V
= 550 mA, V
Frequency
Frequency
1880 MHz
1900 MHz
1920 MHz
2025 MHz
out
@ 3 dB Compression Point ≃ 160 Watts CW
GSB
GSB
= 1.6 Vdc, P
= 1.6 Vdc, P
(dB)
16.5
16.6
16.5
(dB)
15.3
G
G
ps
ps
(1,2)
Rating
out
out
44.8
45.3
45.8
44.0
(%)
(%)
η
η
= 37 Watts Avg., IQ Magnitude
= 37 Watts Avg., IQ Magnitude
D
D
Output PAR
Output PAR
(dB)
(dB)
7.0
6.9
6.9
6.8
out
)
DD
DD
= 28 Volts,
= 28 Volts,
ACPR
ACPR
(dBc)
--29.8
--30.1
--30.6
(dBc)
--30.0
Symbol
V
V
V
T
T
DSS
T
GS
DD
stg
C
J
RF
RF
Document Number: MRF8P2160H
MRF8P20160HR3 MRF8P20160HSR3
CASE 465H- -02, STYLE 1
inA
1880- -2025 MHz, 37 W AVG., 28 V
CASE 465M- -01, STYLE 1
MRF8P20160HSR3
inB
MRF8P20160HR3
/V
/V
MRF8P20160HSR3
Figure 1. Pin Connections
GSA
GSB
MRF8P20160HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -780S- -4
NI- -780- -4
3
4
SINGLE W- -CDMA
-- 65 to +150
--0.5, +65
--6.0, +10
(Top View)
32, +0
Value
150
225
Rev. 1, 7/2010
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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MRF8P20160HR3 Summary of contents

Page 1

... CASE 465M- -01, STYLE 1 NI- -780- -4 MRF8P20160HR3 CASE 465H- -02, STYLE 1 NI- -780S- -4 MRF8P20160HSR3 inA GSA inB GSB (Top View) Figure 1. Pin Connections Symbol Value V --0.5, +65 DSS V --6. +150 stg T 150 C T 225 J MRF8P20160HR3 MRF8P20160HSR3 /V outA DSA /V outB DSB Unit Vdc Vdc Vdc °C °C °C 1 ...

Page 2

... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Part internally matched both on input and output. 5. Measurement made with device in a Symmetrical Doherty configuration. MRF8P20160HR3 MRF8P20160HSR3 2 = 550 mA 1.3 Vdc, 1900 MHz DQA GSB = 25° ...

Page 3

... W — 160 — W MHz — 13 — — 50 — MHz — 0.2 — dB — 0.01 — dB/°C — 0.009 — dB/° Vdc 550 mA, DD DQA , Input Signal PAR = 9 0.01% Output PAR ACPR η D (%) (dB) (dBc) 44.0 6.8 --30.0 MRF8P20160HR3 MRF8P20160HSR3 3 ...

Page 4

... V GA C10 Z1 R1 C11 V GB Figure 2. MRF8P20160HR3(HSR3) Test Circuit Component Layout Table 5. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2, C12, C13 10 pF Chip Capacitors C3 0.3 pF Chip Capacitor C4, C5 1.1 pF Chip Capacitors C6, C7, C18, C19 12 pF Chip Capacitors C8, C9, C20, C21, C22, C23 10 μ ...

Page 5

... RF Device Data Freescale Semiconductor Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P20160HR3 MRF8P20160HSR3 5 ...

Page 6

... MRF8P20160HR3 MRF8P20160HSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc (Avg.), I = 550 mA DD out DQA = 1.6 Vdc, Single--Carrier W--CDMA GSB 3.84 MHz Channel Bandwidth Input Signal PAR = 9 0.01% Probability on CCDF PARC IRL 1875 1900 1925 1950 1975 ...

Page 7

... Figure 10. Single- -Carrier W- -CDMA Spectrum 60 0 η --10 40 --20 ACPR -- -- --50 0 --60 100 300 0 --7 --14 --21 -- Vdc = 550 mA --35 = 1.6 Vdc --42 2080 2140 3.84 MHz Channel BW +ACPR in 3.84 MHz --ACPR in 3.84 MHz Integrated BW Integrated BW --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8P20160HR3 MRF8P20160HSR3 7 ...

Page 8

... Maximum efficiency measurement reflects pulsed 1 dB gain compression Test circuit impedance as measured from gate contact to ground. source Z = Test circuit impedance as measured from drain contact to ground. load Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side MRF8P20160HR3 MRF8P20160HSR3 Vdc 550 mA DD DQA (1) ...

Page 9

... P1dB 5.14 -- j9.41 1900 P1dB 7.59 -- j9.88 1920 P1dB 8.90 -- j9.65 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 1880 MHz P3dB dBm 50.9 50.8 50.7 Z load Ω 1.65 -- j5.46 1.67 -- j5.43 1.66 -- j5.50 MRF8P20160HR3 MRF8P20160HSR3 9 ...

Page 10

... C10 Z1 R1 C11 Stacked Figure 14. MRF8P20160HR3(HSR3) Test Circuit Component Layout — 2025 MHz Table 6. MRF8P20160HR3(HSR3) Test Circuit Component Designations and Values — 2025 MHz Part C1, C2, C6, C7, C12, C13 Chip Capacitors C20, C21 C3, C14, C15 0.3 pF Chip Capacitors C4, C5 2.4 pF Chip Capacitors C8, C9, C22, C23, C24, C25 10 μ ...

Page 11

... Vdc GSB 1900 1950 2000 2050 2100 f, FREQUENCY (MHz) Figure 17. Broadband Frequency Response 44 η --29 --16 --2.5 --30 --3 --16.5 --31 --3.5 --17 --32 --4 --17.5 --33 --4.5 --18 --34 --5 --18.5 2030 2035 60 0 η --20 ACPR -- -- --60 100 300 0 --5 --10 --15 --20 --25 --30 2150 2200 MRF8P20160HR3 MRF8P20160HSR3 11 ...

Page 12

... MRF8P20160HR3 MRF8P20160HSR3 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF8P20160HR3 MRF8P20160HSR3 13 ...

Page 14

... MRF8P20160HR3 MRF8P20160HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF8P20160HR3 MRF8P20160HSR3 15 ...

Page 16

... Apr. 2010 • Initial Release of Data Sheet 1 July 2010 • Added part number MRF8P20160HR3 (NI--780--4 • Corrected I DQ1A resistance value from 0.95 to 0.75°C/W. Thermal value now reflects the use of the combined dissipated power from the carrier amplifier and peaking amplifier • ...

Page 17

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P20160HR3 MRF8P20160HSR3 17 ...

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