BCM 846S E6327 Infineon Technologies, BCM 846S E6327 Datasheet

TRANSISTOR ARRAY NPN AF SOT-363

BCM 846S E6327

Manufacturer Part Number
BCM 846S E6327
Description
TRANSISTOR ARRAY NPN AF SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCM 846S E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage Vceo Max
65 V
Continuous Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCM846SE6327XT
SP000013958
NPN Silicon AF Transistor Array
Type
BCM846S
1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
S
Precision matched transistor pair:
For current mirror applications
Low collector-emitter saturation voltage
Two (galvanic) internal isolated Transistors
Complementary type: BCM856S
BCM846S: For orientation in reel see
Pb-free (RoHS compliant) package
Qualified according AEC Q101
package information below
TR1
C1
E1
6
1
= 115 °C
B2
B1
5
2
E2
C2
EHA07178
4
3
TR2
Marking
1Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1)
I
C
10%
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
C
CM
j
stg
CEO
CES
CBO
EBO
tot
-65 ... 150
6
5
4
Value
100
200
250
150
65
80
80
6
BCM846S
Package
2007-04-26
1
2
3
Unit
V
mA
mW
°C

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BCM 846S E6327 Summary of contents

Page 1

NPN Silicon AF Transistor Array Precision matched transistor pair: For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S BCM846S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 4

DC current gain 100 - Base-emitter saturation ...

Page 5

Collector current 0.4 0.5 0.6 0.7 Transition frequency parameter GHz CE ...

Page 6

Total power dissipation P 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load totmax totDC ...

Page 7

Definition of matching )/ BCM846S 2007-04-26 ...

Page 8

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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