BCM 856S E6327 Infineon Technologies, BCM 856S E6327 Datasheet
BCM 856S E6327
Specifications of BCM 856S E6327
SP000014127
Related parts for BCM 856S E6327
BCM 856S E6327 Summary of contents
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PNP Silicon AF Transistor Array Precision matched transistor pair: I For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S BC856S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...
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DC current gain 100 - Base-emitter saturation ...
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Collector current Parameter TA=100° TA=25° 0.2 0.3 0.4 0.5 0.6 Transition frequency parameter ...
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Total power dissipation P 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load totmax totDC ...
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Definition of matching )/ BCM856S 2007-04-27 ...
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Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...