SMBTA 06UPN E6327 Infineon Technologies, SMBTA 06UPN E6327 Datasheet
SMBTA 06UPN E6327
Specifications of SMBTA 06UPN E6327
SP000012393
Related parts for SMBTA 06UPN E6327
SMBTA 06UPN E6327 Summary of contents
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NPN / PNP Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Tape loading orientation Marking on SC74 package Top View ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base ...
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DC current gain 100 - Base-emitter saturation voltage ...
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Collector cutoff current I CBO CBO CBO Collector-base capacitance C Emitter-base capacitance ...
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Permissible Pulse Load K D=0.5 0.2 0 0.05 0.02 0.01 0.005 Permissible Pulse Load thJS p P ...
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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...