MT48LC16M16A2TG-75:D Micron Technology Inc, MT48LC16M16A2TG-75:D Datasheet - Page 69

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MT48LC16M16A2TG-75:D

Manufacturer Part Number
MT48LC16M16A2TG-75:D
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC16M16A2TG-75:D

Density
256 Mb
Maximum Clock Rate
133 MHz
Package
54TSOP-II
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
6|5.4 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
6/5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC16M16A2TG-75:D
Manufacturer:
MICRON
Quantity:
8 000
Part Number:
MT48LC16M16A2TG-75:D TR
Manufacturer:
MT
Quantity:
210
Figure 39: READ With Auto Precharge Interrupted by a READ
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
states
Command
Note:
Address
Bank m
Bank n
CLK
DQ
registered. The last valid data WRITE to bank n will be data registered one clock prior to
a WRITE to bank m (see Figure 46 (page 75)).
1. DQM is LOW.
Page active
NOP
T0
READ - AP
Page active
Bank n,
Bank n
T1
Col a
READ with burst of 4
T2
CL = 3 (bank n)
NOP
69
READ - AP
Bank m,
T3
Bank m
Col d
Interrupt burst, precharge
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4
CL = 3 (bank m)
NOP
t
RP - bank n
D
OUT
T5
NOP
256Mb: x4, x8, x16 SDRAM
D
OUT
PRECHARGE Operation
T6
NOP
D
© 1999 Micron Technology, Inc. All rights reserved.
OUT
Idle
T7
Don’t Care
NOP
t RP - bank m
D
Precharge
OUT

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