MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 123

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Figure 97: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled
Figure 98: ERASE BLOCK Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
I/O[7:0]
I/O[7:0]
R/B#
WE#
RDY
CLE
ALE
CE#
RE#
00h
Source address
(5 cycles)
Address
t
WC
60h
add 1
35h
Row
Row address
t
R_ECC
add 2
Row
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
add 3
Row
Status
00h
D0h
t
WB
D
D
OUT
OUT
123
Busy
t
BERS
Asynchronous Interface Timing Diagrams
is optional
85h
Destination address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(5 cycles)
READ STATUS
Address
2Gb: x8, x16 NAND Flash Memory
command
70h
Data
(Unlimitted repetitions are possible)
t
WHR
85h
Column address 1, 2
I/O0 = 0, Pass
I/O0 = 1, Fail
(2 cycles)
Address
Status
© 2009 Micron Technology, Inc. All rights reserved.
Data
10h
t
PROG_ECC
Don’t Care
70h