CGY41 (P) Infineon Technologies, CGY41 (P) Datasheet

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CGY41 (P)

Manufacturer Part Number
CGY41 (P)
Description
RF Amplifier HiRel L&S-Band GaAs Gen Purpose Amp
Manufacturer
Infineon Technologies
Type
General Purpose Amplifierr
Datasheet

Specifications of CGY41 (P)

Operating Frequency
100 MHz to 3 GHz
P1db
18 dBm
Noise Figure
2.7 dB at 1.8 GHz
Bandwidth
3000 MHz
Supply Current
80 mA
Maximum Power Dissipation
440 mW
Mounting Style
SMD/SMT
Package / Case
Micro-X
Number Of Channels
1 Channel
Package
Micro-X
Comment
Also available in (H) and (S) quality
Ids (max)
60.0 mA
Vds (min)
5.5 V
Nf(typ)@12ghz
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
CGY41PNZ
HiRel L- and S-Band GaAs General Purpose Amplifier
 HiRel Discrete and Microwave Semiconductor
 Single-stage monolithic microwave IC
 Application range: 100 MHz to 3 GHz
 Gain: 9.5 dB typ. @ 1.8 GHz
 Low noise figure: 2.7 dB typ. @ 1.8 GHz
 Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 *
 Input and output matched to 50
 Individual current control with neg. gate bias
 Hermetically sealed ceramic package micro-x
ESD:
(see order instructions for ordering example)
IFAG IMM RPD D
(ql) Quality Level:
Type
CGY41 (ql)
(MMIC-amplifier )
Operating voltage range: 3 to 5.5 V
Electrostatic discharge sensitive device,
observe handling precautions!
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Marking
-
Ordering Code Circuit Diagram
see below
1 of 6
Ordering Code:
Ordering Code:
Ordering Code:
(Pin Configuration)
4
1
on request
on request
on request
Target DATASHEET
Package
Micro-X
CGY41
3
2

Related parts for CGY41 (P)

CGY41 (P) Summary of contents

Page 1

HiRel L- and S-Band GaAs General Purpose Amplifier  HiRel Discrete and Microwave Semiconductor  Single-stage monolithic microwave IC (MMIC-amplifier )  Application range: 100 MHz to 3 GHz  Gain: 9.5 dB typ. @ 1.8 GHz  Low noise ...

Page 2

Maximum ratings Drain-voltage Gate-voltage Drain-gate voltage 1) RF Input power Channel temperature Storage temperature range Total power dissipation (T < 82°C) S Thermal resistance 2) Channel-soldering point Notes: Exceeding any of the max. ratings may cause permanent damage to the ...

Page 3

Electrical Characteristics ° (for application circuit see next page) Characteristics Drain current Power gain f = 200 MHz f = 1800 MHz Gain flatness f = 200 to 1000 ...

Page 4

Application Circuit ( f = 800 to 1800 MHz ) Input 1 50Ohm 50 Ohm Microstripline Legend of components Chip capacitors 100 Chip capacitors 1 nF ...

Page 5

Total Power Dissipation P 500 tot 400 300 200 100 0 150 IFAG IMM RPD tot CGY41 T S 100 T ...

Page 6

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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