MT46V32M16P-5B:F Micron Technology Inc, MT46V32M16P-5B:F Datasheet - Page 48

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP Tray

MT46V32M16P-5B:F

Manufacturer Part Number
MT46V32M16P-5B:F
Description
DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16P-5B:F

Density
512 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Package / Case
66-TSOP
Organization
32Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
215mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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ACTIVE (ACT)
Figure 17:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 17. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands

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