BCP55-10,115 NXP Semiconductors, BCP55-10,115 Datasheet - Page 13

• Manufacturer Part Number: BCP55-10,115
• Description: TRANSISTOR NPN 60V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP55-10,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 960mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933917220115; BCP55-10 T/R; BCP55-10 T/R

NXP Semiconductors
10. Revision history
Table 10.
BC637_BCP55_BCX55_7
Product data sheet
Document ID
BC637_BCP55_BCX55_7
Modifications:
BC637_BCP55_BCX55_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
Revision history
Release date
20070625
20050218
20011010
20030206
20011010
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Product
Section 1.2
Section 1.3
Table 2 “Quick reference
Table 2 “Quick reference
Figure 2
Table 6 “Limiting
Table 6 “Limiting
Table 6 “Limiting
Table 7 “Thermal
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Table 9 “Packing
Section 11 “Legal
4: Z
4: t
5: added
6: Z
6: t
7: added
8: Z
8: t
9: added
11: amended
and 3: amended
p
p
p
th
th
th
parameter redefined to pulse duration
parameter redefined to pulse duration
parameter redefined to pulse duration
“Features”: amended
“Applications”: amended
Data sheet status
Product data sheet
redefined to Z
redefined to Z
redefined to Z
Product data sheet
Product specification
Product specification
Product specification
overview”: amended
values”: I
values”: I
values”: P
Rev. 07 — 25 June 2007
methods”: new packing method for BCX55 added
characteristics”: R
information”: updated
data”: I
data”: I
C
CM
th(j-a)
th(j-a)
th(j-a)
tot
parameter redefined to collector current
condition added
values for BCP55 and BCX55 adapted
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
C
CM
parameter redefined to collector current
condition added
th(j-a)
BC637; BCP55; BCX55
values for BCP55 and BCX55 rounded
Change notice
-
CPCN200405029
-
-
-
60 V, 1 A NPN medium power transistors
Supersedes
BC637_BCP55_BCX55_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
BC635_637_639_3
BCP54_55_56_4
BCX54_55_56_3
© NXP B.V. 2007. All rights reserved.
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