BSP33,115 NXP Semiconductors, BSP33,115 Datasheet - Page 2

• Manufacturer Part Number: BSP33,115
• Description: TRANS PNP 80V 1000MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP33,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933981990115; BSP33 T/R; BSP33 T/R

NXP Semiconductors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Telephony and general industrial applications.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BSP41 and BSP43.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 26
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP medium power transistors
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BSP31
BSP32; BSP33
BSP32; BSP33
BSP31
PARAMETER
open emitter
open base
open collector
T
amb
2
= 25 °C; note 1
PINNING
handbook, halfpage
CONDITIONS
Fig.1 Simplified outline (SOT223) and symbol.
PIN
2, 4
1
3
Top view
1
BSP31; BSP32; BSP33
base
collector
emitter
2
4
−
−
−
−
−
−
−
−
−
−65
−
−65
3
MIN.
DESCRIPTION
MAM288
−70
−90
−60
−80
−5
−1
−2
−200
1.3
+150
150
+150
Product data sheet
1
MAX.
2, 4
3
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
.
UNIT