BSP33,115 NXP Semiconductors, BSP33,115 Datasheet - Page 3

• Manufacturer Part Number: BSP33,115
• Description: TRANS PNP 80V 1000MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP33,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933981990115; BSP33 T/R; BSP33 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
R
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels)
t
t
SYMBOL
SYMBOL
amb
CBO
EBO
T
on
off
FE
CEsat
BEsat
PNP medium power transistors
th j-a
th j-s
c
e
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
turn-off time
BSP32
BSP31; BSP33
p
≤ 300 μs; δ ≤ 0.01.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
IC = −150 mA; IB = −15 mA; note 1
I
I
I
I
I
E
E
C
C
C
C
C
C
C
C
C
C
E
C
C
Con
= 0; V
= 0; V
= i
= 0; V
= −100 μA; V
= −100 mA; V
= −500 mA; V
= −100 μA; V
= −100 mA; V
= −500 mA; V
= −150 mA; I
= −500 mA; I
= −500 mA; I
= i
= −50 mA; V
= −100 mA; I
e
c
= 0; V
= 0; V
CB
CB
EB
3
= −60 V
= −60 V; T
= −5 V
CB
EB
CONDITIONS
CE
note 1
= −0.5 V; f = 1 MHz
B
B
B
= −10 V; f = 1 MHz
CE
CE
CE
CE
CE
CE
= −15 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
Bon
= −10 V; f = 100 MHz
CONDITIONS
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
= −5 V; note 1
= −5 mA; I
j
= 150 °C
Boff
BSP31; BSP32; BSP33
= 5 mA
VALUE
93
12
−
−
−
10
40
30
30
100
50
−
−
−
−
−
−
100
−
−
MIN.
Product data sheet
−100
−50
−100
−
120
−
−
300
−
−250
−500
−1
−1.2
20
120
−
500
650
MAX.
UNIT
K/W
K/W
2
.
nA
μA
nA
mV
mV
V
V
pF
pF
MHz
ns
ns
UNIT