BCX 68-16 E6327 Infineon Technologies, BCX 68-16 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCX 68-16 E6327
• Description: TRANSISTOR NPN AF 20V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCX 68-16 E6327

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BCX6816E6327XT; SP000010925

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
I
AC Characteristics
Transition frequency
I
1
C
C
E
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 1 µA, I
= 30 mA, I
= 10 µA, I
= 5 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 1 A, V
= 1 A, I
= 5 mA, V
= 1 A, V
= 100 mA, V
= 25 V, I
= 25 V, I
B
CE
CE
C
= 100 mA
E
CE
CE
B
= 0
E
E
= 1 V
= 1 V
= 0
= 0
= 0
= 0 , T
CE
CE
CE
CE
1)
= 10 V
= 10 V
= 1 V, BCX68-10
= 1 V, BCX68-16
= 1 V, BCX68-25
= 5 V, f = 20 MHz
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
2
f
Symbol
V
V
V
I
h
V
V
T
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
min.
100
160
50
85
60
20
25
5
-
-
-
-
-
-
Values
100
160
250
typ.
100
0.6
-
-
-
-
-
-
-
-
-
max.
100
160
250
375
0.1
0.5
1
2008-10-10
-
-
-
-
-
-
-
BCX68...
MHz
Unit
V
µA
-
V