BSP 61 E6327 Infineon Technologies, BSP 61 E6327 Datasheet - Page 5

• Manufacturer Part Number: BSP 61 E6327
• Description: TRANSISTOR DARL PNP 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP 61 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.8V @ 1mA, 1A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP61E6327XT; SP000011132

Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
totmax
tot max
tot
DC
pF
22
18
16
14
12
10
10
10
10
10
8
6
4
2
5
5
0
/P
3
2
1
0
10
CEB
BSP 60...62
totDC
-6
10
4
= (t
-5
10
8
p
-4
D
)
=
t
T
10
p
12
-3
t
p
10
eb
-2
T
cb
16
= (V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= (V
t
s
p
EHP00273
V
V
EB
CB
CB
CCB
)
10
(V
22
)
EB
0
)
5
R
Total power dissipation P
External resistance R
V
** R
BE
CB
mW
1650
1350
1200
1050
BEmax
10
10
10
900
750
600
450
300
150
= V
5
5
0
7
6
5
0
0
BSP 60...62
CEmax
15
f
or thermal stability
30
45
50
60
BE
75
= (T
BSP60-BSP62
90 105 120
tot
100
= (T
2007-04-26
A
)**
S
EHP00666
)
˚C
T
T
°C
A
S
150
150