BCP 56-10 E6327 Infineon Technologies, BCP 56-10 E6327 Datasheet
BCP 56-10 E6327
Specifications of BCP 56-10 E6327
SP000010712
Related parts for BCP 56-10 E6327
BCP 56-10 E6327 Summary of contents
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NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking BCP54 * BCP54-16 ...
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Maximum Ratings Parameter Collector-emitter voltage BCP54 BCP55 BCP56 Collector-emitter voltage BCP54 BCP55 BCP56 Collector-base voltage BCP54 BCP55 BCP56 Emitter-base voltage Collector current ≤ Peak collector current Base current Peak base current Total power dissipation- ≤ 120°C ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCP54... mA BCP55... mA ...
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DC current gain BCP 54... 100 - ...
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Transition frequency BCP 54... MHz Permissible Pulse Load ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...