2N6517 ON Semiconductor, 2N6517 Datasheet - Page 2

• Manufacturer Part Number: 2N6517
• Description: TRANS NPN SS GP 350V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6517

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N6517OS

1. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
EB
= 1.0 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 20 mAdc, I
= 30 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 20 mAdc, I
= 30 mAdc, I
= 100 mAdc, V
= 150 Vdc, I
= 250 Vdc, I
= 5.0 Vdc, I
= 4.0 Vdc, I
C
B
B
B
B
B
B
B
B
E
C
C
CE
CE
CE
= 0)
E
E
CE
= 1.0 mAdc)
= 2.0 mAdc)
= 3.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 2.0 mAdc)
= 3.0 mAdc)
CE
CE
= 0)
= 0 )
= 0)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
300 ms, Duty Cycle
Characteristic
(T
A
= 25 C unless otherwise noted)
2.0%.
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2N6515
2N6517, 2N6520
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
BE(on)
h
CBO
EBO
FE
Min
250
350
250
350
6.0
5.0
35
20
50
30
50
30
45
20
25
15
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.30
0.35
0.50
0.75
0.85
0.90
300
200
220
200
1.0
2.0
50
50
50
50
−
−
−
−
−
−
−
−
−
−
−
−
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−