2N6517 ON Semiconductor, 2N6517 Datasheet - Page 6

• Manufacturer Part Number: 2N6517
• Description: TRANS NPN SS GP 350V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6517

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N6517OS

1.0 k
7.0 k
5.0 k
3.0 k
2.0 k
1.0 k
10 k
700
500
300
200
100
700
500
300
200
100
70
50
30
20
10
1.0
1.0
2.0
2.0 3.0
t
f
Figure 14. Turn−Off Time
Figure 12. Turn−On Time
3.0
t
t
NPN 2N6515, 2N6517
s
NPN 2N6515, 2N6517
t
d
r
I
I
@ V
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
BE(off)
= 2.0 V
10
10
V
I
I
T
C
B1
J
CE(off)
/I
= 25 C
B
= I
20
20
= 5.0
B2
= 100 V
V
I
T
C
CE(off)
J
30
/I
30
2N6515, 2N6517, 2N6520
= 25 C
B
= 5.0
= 100 V
50
50 70
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70
100
100
6
1.0 k
2.0 k
1.0 k
700
500
300
200
100
700
500
300
200
100
70
50
20
10
70
50
30
20
30
−1.0
−1.0
−2.0 −3.0
−2.0 −3.0
Figure 15. Turn−Off Time
Figure 13. Turn−On Time
t
r
I
I
C
C
t
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
d
t
s
t
@ V
f
−5.0 −7.0 −10
−5.0 −7.0 −10
PNP 2N6520
PNP 2N6520
BE(off)
= 2.0 V
−20 −30
−20 −30
V
I
I
T
C
B1
CE(off)
J
/I
= 25 C
B
= I
V
I
T
C
= 5.0
CE(off)
J
/I
B2
= 25 C
B
= −100 V
= 5.0
= −100 V
−50 −70
−50 −70
−100
−100