2N6517 ON Semiconductor, 2N6517 Datasheet - Page 7

• Manufacturer Part Number: 2N6517
• Description: TRANS NPN SS GP 350V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6517

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N6517OS

500
200
100
5.0
2.0
1.0
0.5
0.07
0.05
0.03
0.02
0.01
50
20
10
1.0
0.7
0.5
0.3
0.2
0.1
0.5
0.1
Figure 18. Active Region Safe Operating Area
T
A
0.2
D = 0.5
= 25 C
1.0
T
0.1
C
0.2
CURVES APPLY
BELOW RATED V
V
PULSE WIDTH 100 ms
t
DUTY CYCLE 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
= 25 C
r
CE
, t
2.0
f
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.05
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5.0 ns
(PULSE CURVES @ T
100 ms
+10.8 V
0.5
5.0
SINGLE PULSE
SINGLE PULSE
CEO
−9.2 V
10
1.0
20
2.0
C
2N6517, 2N6520
= 25 C)
100 ms
50 100
Figure 16. Switching Time Test Circuit
2N6515
5.0
2N6515, 2N6517, 2N6520
1.0 ms
Figure 17. Thermal Response
200
10 ms
10
http://onsemi.com
500
V
FOR V
CC
1/2MSD7000
20
t, TIME (ms)
ADJUSTED
7
Design Note: Use of Transient Thermal Resistance Data
1.0 k
CE(off)
APPROXIMATELY
= 100 V
50
−1.35 V
Z
Z
qJC(t)
qJA(t)
100
+V
= r(t) R
= r(t) R
CC
2.2 k
(ADJUST FOR V
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
200
t
1
qJA
qJC
20 k
FIGURE A
P
T
T
P
1/f
J(pk)
J(pk)
t
P
500
− T
− T
(BE)off
50
A
C
50 W SAMPLING SCOPE
= P
= P
1.0 k
= 2.0 V)
(pk)
(pk)
t P
t 1
P
Z
Z
qJA(t)
qJC(t)
2.0 k
P
P
5.0 k
10 k