MMBT 3904 LT3 Infineon Technologies, MMBT 3904 LT3 Datasheet - Page 6

• Manufacturer Part Number: MMBT 3904 LT3
• Description: TRANSISTOR NPN 40V 200MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBT 3904 LT3

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 300 MHz
• Collector- Emitter Voltage Vceo Max: 40 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: MMBT3904LT3XT; SP000011670

DC current gain h
V
Collector-base capacitance C
Emitter-base capacitance C
h
CE
FE
10
10
10
pF
5
5
= 10 V, normalized
-1
0
1
9
7
6
5
4
3
2
1
0
10
0
-1
4
5
10
FE
CEB
0
8
=
125 C
-55 C
25 C
5
12
(I
C
10
)
eb
1
cb
16
= (V
= (V
mA
A
EHP00765
V
EB
C
10
CB
CB
CCB
)
2
(V
22
)
EB
2
6
Saturation voltage I
h
Total power dissipation P
SMBT3904/MMBT3904
C
FE
mA
mW
10
10
10
2
5
5
= 10
360
300
270
240
210
180
150
120
2
1
0
90
60
30
0
0
0
15
0.2
V
CE
30
SMBT3904...MMBT3904
45
0.4
60
C
= (V
0.6
75
90 105 120
tot
BEsat
0.8
= (T
V
V
BE sat
2007-09-20
BE
; V
1.0
S
EHP00756
CEsat
)
,
T
°C
V
S
V
CE sat
150
1.2
)