MMUN2134LT1G ON Semiconductor, MMUN2134LT1G Datasheet - Page 12

• Manufacturer Part Number: MMUN2134LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MMUN2134LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.1
0.001
10
1
0.01
8
7
6
5
4
3
2
1
0
0.1
0
Figure 41. Input Voltage versus Output Current
0
1
0
T
75°C
A
I
C
5
= −25°C
/I
B
V
= 10
10
R
10
I
Figure 39. Output Capacitance
C
, REVERSE BIAS VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
10
I
C
Figure 37. V
, COLLECTOR CURRENT (mA)
15
25°C
−25°C
20
20
20
25
CE(sat)
TYPICAL ELECTRICAL CHARACTERISTICS
30
30
30
versus I
35
25°C
V
O
= 0.2 V
f = 1 MHz
l
T
40
E
A
40
= 0 V
= 25°C
C
40
http://onsemi.com
45
MMUN2133LT1
75°C
50
50
50
12
0.001
1000
0.01
Figure 42. Inexpensive, Unregulated Current Source
100
100
0.1
10
10
1
1
0
1
Figure 40. Output Current versus Input Voltage
75°C
Typical Application
T
1
for PNP BRTs
A
= −25°C
2
25°C
I
Figure 38. DC Current Gain
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
T
A
= −25°C
4
75°C
5
10
6
25°C
+12 V
V
7
O
= 5 V
LOAD
8
V
CE
= 10 V
9
100
10