MMUN2134LT1G ON Semiconductor, MMUN2134LT1G Datasheet - Page 8

• Manufacturer Part Number: MMUN2134LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MMUN2134LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
2
I
C
/I
B
4
= 10
Figure 19. Output Capacitance
V
6
R
Figure 17. V
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
8
, COLLECTOR CURRENT (mA)
10
15 20
CE(sat)
40
0.1
10
TYPICAL ELECTRICAL CHARACTERISTICS
1
Figure 21. Input Voltage versus Output Current
T
0
25
A
= -25°C
versus I
V
O
30
= 0.2 V
f = 1 MHz
l
T
E
75°C
A
35
60
= 0 V
= 25°C
10
C
40
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
25°C
MMUN2114LT1
T
45 50
A
= -25°C
20
80
8
75°C
100
180
160
140
120
100
10
80
60
40
20
30
25°C
1
0
1
0
Figure 20. Output Current versus Input Voltage
V
CE
2
= 10 V
4
40
2
6
Figure 18. DC Current Gain
T
I
A
C
V
8
, COLLECTOR CURRENT (mA)
= 75°C
in
, INPUT VOLTAGE (VOLTS)
10
50
4
15 20 40 50 60 70 80 90
-25°C
6
25°C
V
O
-25°C
= 5 V
T
A
25°C
= 75°C
8
100
10