MMUN2134LT1G ON Semiconductor, MMUN2134LT1G Datasheet - Page 3

TRANS BRT PNP 50V SOT-23

MMUN2134LT1G

Manufacturer Part Number
MMUN2134LT1G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of MMUN2134LT1G

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
MMUN2134LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 200
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MMUN2134LT1G
Manufacturer:
ON
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Manufacturer:
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Quantity:
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ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
(V
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
= 0.050 V, R
Characteristic
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted) (Continued)
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MMUN2134LT1G
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MMUN2131LT1G
MMUN2132LT1G
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MMUN2134LT1G
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http://onsemi.com
3
Symbol
V
CE(sat)
V
V
h
FE
OH
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
Typ
100
140
140
250
250
140
130
5.0
60
15
27
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
Vdc
Vdc
Vdc

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