MMUN2134LT1G ON Semiconductor, MMUN2134LT1G Datasheet - Page 5

• Manufacturer Part Number: MMUN2134LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MMUN2134LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

250
200
150
100
1000
0.001
100
0.01
50
100
0
10
0.1
-50
10
1
1
0
Figure 5. Output Current versus Input Voltage
1
75°C
T
Figure 1. Derating Curve
Figure 3. DC Current Gain
2
0
A
, AMBIENT TEMPERATURE (°C)
I
C
, COLLECTOR CURRENT (mA)
V
in
R
3
, INPUT VOLTAGE (VOLTS)
T
qJA
A
25°C
= -25°C
= 625°C/W
4
50
10
5
TYPICAL ELECTRICAL CHARACTERISTICS
6
V
O
100
7
= 5 V
V
8
CE
T
-25°C
A
http://onsemi.com
= 10 V
= 75°C
MMUN2111LT1
9
25°C
150
100
10
5
100
0.01
0.1
10
0.1
1
1
4
3
2
1
0
0
0
0
Figure 6. Input Voltage versus Output Current
V
O
= 0.2 V
I
C
/I
B
= 10
10
10
Figure 4. Output Capacitance
V
R
I
20
Figure 2. V
, REVERSE BIAS VOLTAGE (VOLTS)
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
40
T
A
T
= -25°C
A
30
30
= -25°C
versus I
75°C
75°C
60
25°C
C
f = 1 MHz
l
T
E
40
A
40
= 0 V
= 25°C
25°C
50
80
50