BCV 61C E6327 Infineon Technologies, BCV 61C E6327 Datasheet
BCV 61C E6327
Specifications of BCV 61C E6327
SP000010887
Related parts for BCV 61C E6327
BCV 61C E6327 Summary of contents
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NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BCV61 1Js BCV61B 1Ks BCV61C 1Ls Maximum ...
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Thermal Resistance Electrical Characteristics Junction - soldering point Parameter DC Characteristics of T1 Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter Characteristics Base-emitter forward voltage µ 250 mA E Matching of transistor T1 and transistor 0.5mA and CE1 °C ...
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Test circuit for current matching ... CE1 Note: Voltage drop at contacts: V Characteristic for determination parameter under condition ... ...
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Collector-base capacitance C Emitter-base capacitance CEB Permissible pulse load totmax totDC p BCV 61 3 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...
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