MAC4DHMT4G ON Semiconductor, MAC4DHMT4G Datasheet - Page 4

THYRISTOR TRIAC 4A 600V DPAK

MAC4DHMT4G

Manufacturer Part Number
MAC4DHMT4G
Description
THYRISTOR TRIAC 4A 600V DPAK
Manufacturer
ON Semiconductor
Type
TRIACr
Datasheet

Specifications of MAC4DHMT4G

Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
40A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - On State (it (rms) (max)
4A
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Hold Current
15mA
Gate Trigger Current (max)
10mA
Gate Trigger Voltage (max)
1.3V
Package Type
DPAK
Peak Repeat Off Current
10uA
Peak Surge On-state Current (max)
40A
On State Voltage(max)
1.6@6AV
Mounting
Surface Mount
Pin Count
2 +Tab
Operating Temp Range
-40C to 110C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MAC4DHMT4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAC4DHMT4G
Manufacturer:
ON/安森美
Quantity:
20 000
105
100
100
110
1.0
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
95
90
10
0
-40
0
0
Q3
Q1
Q2
Figure 5. Typical Gate Trigger Current versus
-25
a = CONDUCTION ANGLE
0.5
0.5
TYPICAL @ T
V
Q4
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
-10
Figure 1. RMS Current Derating
I
T(RMS)
1.0
1.0
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
, RMS ON-STATE CURRENT (AMPS)
5.0
J
= 25 C
MAXIMUM @ T
1.5
1.5
20
2.0
2.0
35
J
= 25 C
50
a = 30
2.5
2.5
MAXIMUM @ T
120
65
3.0
3.0
180
80
J
3.5
3.5
60
= 110 C
95
http://onsemi.com
dc
90
110
4.0
4.0
4
0.01
6.0
5.0
4.0
3.0
2.0
1.0
1.0
0.1
1.0
0.8
0.6
0.4
0.2
0
-40
0
0.1
Q1
Q2
Figure 6. Typical Gate Trigger Voltage versus
-25
a = CONDUCTION ANGLE
Figure 4. Transient Thermal Response
0.5
Figure 2. On−State Power Dissipation
Q3
Q4
-10
I
1.0
T(RMS)
1.0
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
, RMS ON-STATE CURRENT (AMPS)
5.0
1.5
10
20
t, TIME (ms)
2.0
35
100
50
Z
90
2.5
qJC(t)
120
65
a = 30
= R
3.0
qJC(t)
180
1000
80
Sr(t)
3.5
95
60
dc
10 K
110
4.0

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