MAC4DHM-001G ONSEMI [ON Semiconductor], MAC4DHM-001G Datasheet

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MAC4DHM-001G

Manufacturer Part Number
MAC4DHM-001G
Description
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
MAC4DHM
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
MAXIMUM RATINGS
November, 2005 − Rev. 5
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
Average Gate Power
(t = 8.3 msec, T
Peak Gate Current
(Pulse Width
Peak Gate Voltage
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 4.0 A RMS at 93 C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2005
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
J
DRM
= −40 to 110 C, Sine Wave,
and V
RRM
10 msec, T
10 msec, T
10 msec, T
C
Rating
= 93 C)
for all types can be applied on a continuous basis. Blocking
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
(T
J
J
C
C
C
= 110 C)
= 25 C unless otherwise noted)
= 93 C)
= 93 C)
= 93 C)
Preferred Device
C
= 93 C)
Symbol
I
P
V
V
T(RMS)
I
P
V
I
T
G(AV)
DRM,
TSM
RRM
I
GM
T
GM
GM
stg
2
J
t
−40 to 110
−40 to 150
Value
600
4.0
6.6
0.5
0.1
0.2
5.0
40
1
A
Unit
2
W
W
V
A
A
A
V
sec
C
C
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
3
1
2
3
4
Y
WW
AC4DHM = Device Code
G
MT2
ORDERING INFORMATION
4
4.0 AMPERES RMS
4
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
600 VOLTS
STYLE 6
STYLE 6
DPAK−3
DPAK
TRIACS
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
DIAGRAMS
MARKING
G
MAC4DHM/D
MT1
4DHMG
YWW
4DHMG
AC
YWW
AC

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MAC4DHM-001G Summary of contents

Page 1

... DPAK YWW CASE 369C AC STYLE 6 4DHMG 3 4 DPAK−3 YWW CASE 369D AC STYLE 6 4DHMG Year WW = Work Week AC4DHM = Device Code G = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Publication Order Number: MAC4DHM/D ...

Page 2

... ORDERING INFORMATION Device MAC4DHM−001 MAC4DHM−001G MAC4DHMT4 MAC4DHMT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAC4DHM ( unless otherwise noted; Electricals apply in both directions ...

Page 3

... Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. MAC4DHM (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) ...

Page 4

... V , INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. On−State Characteristics 8.0 7.0 Q4 6.0 5.0 Q3 4.0 Q2 3.0 Q1 2.0 1.0 0 −40 −25 −10 5 JUNCTION TEMPERATURE ( C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature MAC4DHM 6.0 5 CONDUCTION ANGLE 90 3.0 2.0 120 1.0 180 dc 0 3.0 3.5 4.0 0 0.5 Figure 2. On−State Power Dissipation 1.0 = 110 C J 0.1 0.01 3.0 3.5 4.0 0.1 Figure 4. Transient Thermal Response 1 ...

Page 5

... Gate−MT1 Resistance 200 V RMS ADJUST FOR CHARGE TRIGGER CONTROL CHARGE NON-POLAR Note: Component values are for verification of rated (di/dt) Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) MAC4DHM 12 10 8.0 Q2 6 110 − ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MAC4DHM PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MAC4DHM/D ...

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