MAC4DHMT4G ON Semiconductor, MAC4DHMT4G Datasheet - Page 5

• Manufacturer Part Number: MAC4DHMT4G
• Description: THYRISTOR TRIAC 4A 600V DPAK
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of MAC4DHMT4G

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 40A @ 60Hz
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Current - On State (it (rms) (max): 4A
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 15mA
• Gate Trigger Current (max): 10mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: DPAK
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 40A
• On State Voltage(max): 1.6@6AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 110C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC4DHMT4GOSTR

5.0
4.0
3.0
2.0
1.0
40
35
30
25
20
15
10
0
5
-40
100
MT2 POSITIVE
MAC4DHM
Figure 9. Minimum Exponential Static dv/dt
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
-25
I
Figure 7. Typical Holding Current versus
TM
ADJUST FOR
, 60 Hz V
200 V
-10
versus Gate−MT1 Resistance
CHARGE
RMS
T
MT2 NEGATIVE
GATE-MT1 RESISTANCE (OHMS)
AC
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
5.0
TRIGGER
20
Note: Component values are for verification of rated (di/dt)
1000
35
50
CONTROL
NON‐POLAR
CHARGE
65
C
80
V
T
L
J
D
= 110 C
= 400 V
95
http://onsemi.com
10 K
110
5
L
1N914
L
8.0
6.0
4.0
2.0
1.0
0.1
12
10
10
0
-40
c
0
. See AN1048 for additional information.
Q1
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
MEASURE
51 W
Q4
-25
Figure 8. Typical Latching Current versus
Figure 10. Typical Critical Rate of Rise of
V
I
DRM
Q3
MT2
Q2
1.0
G
t
w
-10
MT1
T
C
f =
(di/dt)
J
S
R
, JUNCTION TEMPERATURE ( C)
Junction Temperature
Commutating Voltage
5.0
2 t
S
1
T
w
c
2.0
J
=
= 110 C
6f I
1000
20
TM
ADJUST FOR
di/dt
(c)
3.0
35
1N4007
100 C
50
-
+
4.0
65
90 C
200 V
V
80
PK
5.0
= 400 V
95
c
110
6.0