PIC24FV16KA304T-I/ML Microchip Technology, PIC24FV16KA304T-I/ML Datasheet - Page 62

• Manufacturer Part Number: PIC24FV16KA304T-I/ML
• Description: 16KB Flash, 2KB RAM, 512B EEPROM, 16 MIPS, 12-bit ADC, CTMU, 5V 44 QFN 8x8x0.9mm
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 24Fr

Specifications of PIC24FV16KA304T-I/ML

• Core Processor: PIC
• Core Size: 16-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 16KB (5.5K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-VQFN Exposed Pad
• Processor Series: PIC24FV
• Core: PIC
• Data Bus Width: 16 bit
• Data Ram Size: 2 KB
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: MPLAB IDE Software
• Minimum Operating Temperature: - 40 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC24FV32KA304 FAMILY
5.5.1
The user can program one row of Flash program
memory at a time by erasing the programmable row.
The general process is as follows:
1.
2.
3.
EXAMPLE 5-1:
DS39995B-page 62
; Set up NVMCON for row erase operation
; Init pointer to row to be ERASED
Read a row of program memory (32 instructions)
and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase a row (see
a)
b)
c)
d)
e)
Set the NVMOP bits (NVMCON<5:0>) to
‘011000’ to configure for row erase. Set the
ERASE
(NVMCON<14>) bits.
Write the starting address of the block to be
erased into the TBLPAG and W registers.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the
duration of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
#0x4058, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
(NVMCON<6>)
Example
ERASING A PROGRAM MEMORY ROW – ASSEMBLY LANGUAGE CODE
5-1):
and
WREN
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
for next 5 instructions
4.
5.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in
Example
Write the first 32 instructions from data RAM into
the program memory buffers (see
Write the program block to Flash memory:
a)
b)
c)
d)
Set the NVMOP bits to ‘011000’ to
configure for row programming. Clear the
ERASE bit and set the WREN bit.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
5-5.
 2011 Microchip Technology Inc.
Example
5-1).