S29GL032M10TAIR40 Spansion Inc., S29GL032M10TAIR40 Datasheet

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S29GL032M10TAIR40

Manufacturer Part Number
S29GL032M10TAIR40
Description
IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
Manufacturer
Spansion Inc.

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S29GLxxxM MirrorBit
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 um MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector models): 128 32 Kword (64
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
— 32Mb (uniform sector models): 64 32Kword (64
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
100,000 erase cycles typical per sector
20-year data retention typical
High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
Kbyte) sectors or 128 32 Kword sectors
sectors + 8 4Kword (8Kbyte) boot sectors
Kbyte) sectors of 64 32Kword sectors
sectors + 8 4Kword (8Kbyte) boot sectors
power supply flash, and superior inadvertent write
protection
100 ns access time (256Mb)
Publication Number S29GLxxxM_00
TM
Flash Family
Revision A
Software & Hardware Features
Amendment 5
— 16-word/32-byte write buffer reduces overall
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
— Unlock Bypass Program command reduces overall
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
programming time for multiple-word updates
before programming operation is completed
sectors before an erase operation is completed
system to identify and accommodate multiple flash
devices
multiple-word programming time
preventing write operations within a sector group
charging code in locked sectors
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
erase cycle completion
Issue Date April 30, 2004
ID
PRELIMINARY
-level method of

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