M36W0R5040B7ZAQF Micron Technology Inc, M36W0R5040B7ZAQF Datasheet - Page 12

• Manufacturer Part Number: M36W0R5040B7ZAQF
• Manufacturer: Micron Technology Inc

Specifications of M36W0R5040B7ZAQF

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Signal descriptions
2.12
2.13
2.14
2.15
2.16
2.17
2.18
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PSRAM Output Enable (G
The Output Enable, G
cycles to be achieved with the common I/O data bus.
PSRAM Write Enable (W
The Write Enable, W
PSRAM Upper Byte Enable (UB
The Upper Byte Enable, UB
DQ15) to or from the upper part of the selected address during a write or read operation.
PSRAM Lower Byte Enable (LB
The Lower Byte Enable, LB
DQ7) to or from the lower part of the selected address during a write or read operation.
V
V
main power supplies for all flash memory operations (read, program, and erase).
V
The V
the refresh logic, even when the device is not being accessed.
V
V
outputs to be powered independently of the flash memory and PSRAM core power supplies:
V
DDF
DDQ
DDF
DDF
DDP
DDQ
provides the power supply to the internal core of the flash memory component. It is the
and V
DDP
provides the power supply for the flash memory and PSRAM I/O pins. This allows all
supply voltage
supply voltage
supply voltage
supply voltage supplies the power for all operations (read or write) and for driving
DDP
, respectively.
P
P
, controls the bus write operation of the memory.
, provides a high speed tri-state control, allowing fast read/write
P
P
, gates the data on the lower byte data inputs/outputs (DQ0-
, gates the data on the upper byte data inputs/outputs (DQ8-
P
)
P
)
P
P
)
)
M36W0Rx0x0x7