MT48H4M16LFB4-75 IT:H Micron Technology Inc, MT48H4M16LFB4-75 IT:H Datasheet - Page 36

MT48H4M16LFB4-75 IT:H

Manufacturer Part Number
MT48H4M16LFB4-75 IT:H
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-75 IT:H

Organization
4Mx16
Density
64Mb
Address Bus
14b
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
10. Does not affect the state of the bank and acts as a NOP to that bank.
4. The following states must not be interrupted by any executable command; COMMAND
5. All states and sequences not shown are illegal or reserved.
6. Not bank specific; requires that all banks are idle.
7. May or may not be bank specific; if all banks are to be precharged, all must be in a valid
8. Not bank specific; BURST TERMINATE affects the most recent WRITE or READ burst, regard-
9. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with
INHIBIT or NOP commands must be applied on each positive clock edge during these states.
Refreshing:
Accessing mode
register:
Precharging all:
state for precharging.
less of bank.
auto precharge enabled and READs or WRITEs with auto precharge disabled.
Starts with registration of an AUTO REFRESH command and ends when
t
state.
Starts with registration of a LOAD MODE REGISTER command and ends
when
all banks idle state.
Starts with registration of a PRECHARGE ALL command and ends when
t
RFC is met. After
RP is met. After
t
MRD has been met. After
36
t
RP is met, all banks will be in the idle state.
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RFC is met, the SDRAM will be in the all banks idle
64Mb: 4 Meg x 16 Mobile SDRAM
t
MRD is met, the SDRAM will be in the
©2006 Micron Technology, Inc. All rights reserved.
Operations

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